Department of Electrical and Computer Engineering and ‡Materials Science and Engineering Program, University of California, San Diego , 9500 Gilman Dr., La Jolla, California 92093-0407, United States.
Nano Lett. 2014 Mar 12;14(3):1687-91. doi: 10.1021/nl5006355. Epub 2014 Feb 28.
We report the first experimental demonstration of a three-terminal nanoelectromechanical field effect transistor (NEMFET) with measurable subthreshold slope as small as 6 mV/dec at room temperature and a switching voltage window of under 2 V. The device operates by modulating drain current through a suspended nanowire channel via an insulated gate electrode, thus eliminating the need for a conducting moving electrode, and yields devices that reliably switch on/off for up to 130 cycles. Radio-frequency measurements have confirmed operation at 125 MHz. Our measurements and simulations suggest that the NEMFET design is scalable toward sub-1 V ultrahigh-frequency operation for future low-power computing systems.
我们首次实验演示了一种三端纳米机电场效应晶体管（NEMFET），其室温下的亚阈值斜率可小至 6 mV/dec，开关电压窗口小于 2 V。该器件通过绝缘栅电极对悬浮纳米线通道中的漏极电流进行调制，从而无需使用导电移动电极，并且所得到的器件可可靠地开关 130 次以上。射频测量已证实其在 125 MHz 下的工作情况。我们的测量和模拟表明，NEMFET 设计可朝着用于未来低功耗计算系统的亚 1 V 超高频率操作进行扩展。
