Hua Qilin, Gao Guoyun, Jiang Chunsheng, Yu Jinran, Sun Junlu, Zhang Taiping, Gao Bin, Cheng Weijun, Liang Renrong, Qian He, Hu Weiguo, Sun Qijun, Wang Zhong Lin, Wu Huaqiang
Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, 100084, Beijing, China.
CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, 101400, Beijing, China.
Nat Commun. 2020 Dec 4;11(1):6207. doi: 10.1038/s41467-020-20051-0.
Power dissipation is a fundamental issue for future chip-based electronics. As promising channel materials, two-dimensional semiconductors show excellent capabilities of scaling dimensions and reducing off-state currents. However, field-effect transistors based on two-dimensional materials are still confronted with the fundamental thermionic limitation of the subthreshold swing of 60 mV decade at room temperature. Here, we present an atomic threshold-switching field-effect transistor constructed by integrating a metal filamentary threshold switch with a two-dimensional MoS channel, and obtain abrupt steepness in the turn-on characteristics and 4.5 mV decade subthreshold swing (over five decades). This is achieved by using the negative differential resistance effect from the threshold switch to induce an internal voltage amplification across the MoS channel. Notably, in such devices, the simultaneous achievement of efficient electrostatics, very small sub-thermionic subthreshold swings, and ultralow leakage currents, would be highly desirable for next-generation energy-efficient integrated circuits and ultralow-power applications.
功耗是未来基于芯片的电子产品面临的一个基本问题。作为很有前景的沟道材料，二维半导体展现出了出色的尺寸缩放能力和降低关态电流的能力。然而，基于二维材料的场效应晶体管在室温下仍面临亚阈值摆幅为60 mV/十倍频程的基本热电子学限制。在此，我们展示了一种通过将金属丝状阈值开关与二维MoS沟道集成构建的原子级阈值开关场效应晶体管，并在开启特性中获得了陡峭度以及4.5 mV/十倍频程的亚阈值摆幅（跨越五个十倍频程）。这是通过利用阈值开关的负微分电阻效应在MoS沟道上诱导内部电压放大来实现的。值得注意的是，在这类器件中，同时实现高效静电学、非常小的亚热电子亚阈值摆幅和超低漏电流，对于下一代节能集成电路和超低功耗应用来说将是非常理想的。
