含 HgI2 光电导层和非晶氧化物薄膜晶体管的小剂量敏感 X 射线像元。

Small-dose-sensitive X-ray image pixel with HgI2 photoconductor and amorphous oxide thin-film transistor.

机构信息

Institute of Physics and Applied Physics, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul, 120-749, Korea.

出版信息

Adv Healthc Mater. 2015 Jan 7;4(1):51-7. doi: 10.1002/adhm.201400077. Epub 2014 Apr 19.

DOI:10.1002/adhm.201400077

Abstract

A new X-ray image sensor is demonstrated with an oxide thin-film transistor backplane and HgI2 sensing material. It displays outstanding image quality under a low X-ray exposure and a low electric field. It is promising as a state-of-the-art device to realize highly resolved images at a low X-ray dose for a variety of medical X-ray imaging applications.

摘要

一种新型 X 射线图像传感器采用氧化物薄膜晶体管背板和 HgI2 传感材料制成。它在低 X 射线曝光和低电场下显示出出色的图像质量。有望成为一种最先进的设备，可在各种医疗 X 射线成像应用中实现低 X 射线剂量下的高分辨率图像。