Kim Ji Young, Oh Min-Wook, Lee Seunghun, Cho Yong Chan, Yoon Jang-Hee, Lee Geun Woo, Cho Chae-Ryong, Park Chul Hong, Jeong Se-Young
1] Department of Nano Fusion Technology, Pusan National University, Miryang, 627-706, Republic of Korea [2].
1] Fundamental and Creativity Research Division, Korea Electrotechnology Research Institute, Changwon-si, 642-120, Republic of Korea [2].
Sci Rep. 2014 Jun 26;4:5450. doi: 10.1038/srep05450.
Resistivity is an intrinsic feature that specifies the electrical properties of a material and depends on electron-phonon scattering near room temperature. Reducing the resistivity of a metal to its potentially lowest value requires eliminating grain boundaries and impurities, but to date few studies have focused on reducing the intrinsic resistivity of a pure metal itself. We could reduce the intrinsic resistivity of single-crystal Ag, which has an almost perfect structure, by impurity doping it with Cu. This paper presents our results: resistivity was reduced to 1.35 μΩ · cm at room temperature after 3 mol% Cu-doping of single-crystal Ag. Various mechanisms were examined in an attempt to explain the abnormal behavior.
电阻率是一种固有特性，它规定了材料的电学性质，并且在室温附近取决于电子 - 声子散射。将金属的电阻率降低到其潜在的最低值需要消除晶界和杂质，但迄今为止，很少有研究专注于降低纯金属本身的本征电阻率。我们可以通过用铜对几乎具有完美结构的单晶银进行杂质掺杂来降低其本征电阻率。本文展示了我们的结果：在对单晶银进行3摩尔％的铜掺杂后，室温下电阻率降低到了1.35μΩ·cm。我们研究了各种机制以试图解释这种异常行为。
