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光生载流子掺杂导致光激发单斜相VO₂中瞬时带隙崩塌

Instantaneous band gap collapse in photoexcited monoclinic VO2 due to photocarrier doping.

作者信息

Wegkamp Daniel, Herzog Marc, Xian Lede, Gatti Matteo, Cudazzo Pierluigi, McGahan Christina L, Marvel Robert E, Haglund Richard F, Rubio Angel, Wolf Martin, Stähler Julia

机构信息

Fritz-Haber-Institut der Max-Planck-Gesellschaft, Abteilung Physikalische Chemie, Faradayweg 4-6, 14195 Berlin, Germany.

Nano-Bio Spectroscopy group, Universidad del País Vasco CFM CSIC-UPV/EHU-MPC & DIPC, 20018 San Sebastián, Spain and European Theoretical Spectroscopy Facility (ETSF).

出版信息

Phys Rev Lett. 2014 Nov 21;113(21):216401. doi: 10.1103/PhysRevLett.113.216401. Epub 2014 Nov 17.

DOI:10.1103/PhysRevLett.113.216401
PMID:25479507
Abstract

Using femtosecond time-resolved photoelectron spectroscopy we demonstrate that photoexcitation transforms monoclinic VO2 quasi-instantaneously into a metal. Thereby, we exclude an 80 fs structural bottleneck for the photoinduced electronic phase transition of VO2. First-principles many-body perturbation theory calculations reveal a high sensitivity of the VO2 band gap to variations of the dynamically screened Coulomb interaction, supporting a fully electronically driven isostructural insulator-to-metal transition. We thus conclude that the ultrafast band structure renormalization is caused by photoexcitation of carriers from localized V 3d valence states, strongly changing the screening before significant hot-carrier relaxation or ionic motion has occurred.

摘要

利用飞秒时间分辨光电子能谱,我们证明了光激发能将单斜相VO₂几乎瞬间转变为金属。由此,我们排除了VO₂光致电子相变存在80飞秒的结构瓶颈。第一性原理多体微扰理论计算表明,VO₂带隙对动态屏蔽库仑相互作用的变化具有高度敏感性,支持了完全由电子驱动的等结构绝缘体-金属转变。因此,我们得出结论,超快能带结构重整化是由局域V 3d价态的载流子光激发引起的,在显著的热载流子弛豫或离子运动发生之前,强烈改变了屏蔽效应。

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