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化学气相沉积法制备层状半导体 SnS2 薄膜用于快速光探测应用。

Chemical vapor deposition of thin crystals of layered semiconductor SnS2 for fast photodetection application.

机构信息

Department of Physics and Texas Center for Superconductivity, University of Houston , Houston, Texas 77204-5005, United States.

出版信息

Nano Lett. 2015 Jan 14;15(1):506-13. doi: 10.1021/nl503857r. Epub 2014 Dec 15.

Abstract

Layered two-dimensional (2D) semiconductors, such as MoS(2) and SnS(2), have been receiving intensive attention due to their technological importance for the next-generation electronic/photonic applications. We report a novel approach to the controlled synthesis of thin crystal arrays of SnS(2) at predefined locations on chip by chemical vapor deposition with seed engineering and have demonstrated their application as fast photodetectors with photocurrent response time ∼ 5 μs. This opens a pathway for the large-scale production of layered 2D semiconductor devices, important for applications in integrated nanoelectronic/photonic systems.

摘要

层状二维(2D)半导体,如 MoS(2) 和 SnS(2),由于其在下一代电子/光子应用中的技术重要性而受到广泛关注。我们报告了一种通过化学气相沉积和种子工程在芯片上预定位置可控合成 SnS(2) 薄膜晶体阵列的新方法,并展示了它们在光电流响应时间约为 5 μs 的快速光探测器中的应用。这为大规模生产层状 2D 半导体器件开辟了道路,这对于集成纳米电子/光子系统中的应用非常重要。

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