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金属双层膜中的自旋霍尔磁电阻。

Spin Hall Magnetoresistance in Metallic Bilayers.

作者信息

Kim Junyeon, Sheng Peng, Takahashi Saburo, Mitani Seiji, Hayashi Masamitsu

机构信息

National Institute for Materials Science, Tsukuba 305-0047, Japan.

Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.

出版信息

Phys Rev Lett. 2016 Mar 4;116(9):097201. doi: 10.1103/PhysRevLett.116.097201. Epub 2016 Feb 29.

Abstract

Spin Hall magnetoresistance (SMR) is studied in metallic bilayers that consist of a heavy metal (HM) layer and a ferromagnetic metal (FM) layer. We find a nearly tenfold increase of SMR in W/CoFeB compared to previously studied HM/ferromagnetic insulator systems. The SMR increases with decreasing temperature despite the negligible change in the W layer resistivity. A model is developed to account for the absorption of the longitudinal spin current to the FM layer, one of the key characteristics of a metallic ferromagnet. We find that the model not only quantitatively describes the HM layer thickness dependence of SMR, allowing accurate estimation of the spin Hall angle and the spin diffusion length of the HM layer, but also can account for the temperature dependence of SMR by assuming a temperature dependent spin polarization of the FM layer. These results illustrate the unique role a metallic ferromagnetic layer plays in defining spin transmission across the HM/FM interface.

摘要

在由重金属(HM)层和铁磁金属(FM)层组成的金属双层结构中研究了自旋霍尔磁电阻(SMR)。我们发现,与之前研究的HM/铁磁绝缘体系统相比,W/CoFeB中的SMR增加了近十倍。尽管W层电阻率变化可忽略不计,但SMR随温度降低而增加。建立了一个模型来解释纵向自旋电流被FM层吸收的现象,这是金属铁磁体的关键特性之一。我们发现该模型不仅能定量描述SMR对HM层厚度的依赖性,从而准确估计HM层的自旋霍尔角和自旋扩散长度,还能通过假设FM层的自旋极化随温度变化来解释SMR的温度依赖性。这些结果说明了金属铁磁层在定义自旋穿过HM/FM界面传输过程中所起的独特作用。

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