用于三英寸衬底上单光子发射体的晶圆级外延低密度 InAs/GaAs 量子点

Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate.

作者信息

Huang Xiaoying, Su Rongbin, Yang Jiawei, Rao Mujie, Liu Jin, Yu Ying, Yu Siyuan

机构信息

State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.

State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China.

出版信息

Nanomaterials (Basel). 2021 Apr 6;11(4):930. doi: 10.3390/nano11040930.

DOI:10.3390/nano11040930

PMID:33917459

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8067461/

Abstract

In this work, we successfully achieved wafer-scale low density InAs/GaAs quantum dots (QDs) for single photon emitter on three-inch wafer by precisely controlling the growth parameters. The highly uniform InAs/GaAs QDs show low density of μ0.96/μm2 within the radius of 2 cm. When embedding into a circular Bragg grating cavity on highly efficient broadband reflector (CBR-HBR), the single QDs show excellent optoelectronic properties with the linewidth of 3± 0.08 GHz, the second-order correlation factor g2(τ)=0.0322 ±0.0023, and an exciton life time of 323 ps under two-photon resonant excitation.

摘要

在本工作中，我们通过精确控制生长参数，在三英寸晶圆上成功实现了用于单光子发射体的晶圆级低密度铟砷/砷化镓量子点。高度均匀的铟砷/砷化镓量子点在半径2厘米范围内显示出μ0.96/μm2的低密度。当嵌入高效宽带反射器上的圆形布拉格光栅腔（CBR-HBR）中时，单个量子点表现出优异的光电特性，线宽为3±0.08 GHz，二阶关联因子g2(τ)=0.0322±0.0023，在双光子共振激发下激子寿命为323皮秒。