CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China.
Nanoscale. 2016 Sep 29;8(38):16802-16818. doi: 10.1039/c6nr05976g.
Group III-VI compounds MX (M = Ga, In; X = S, Se, Te) are one class of important 2D layered materials and are currently attracting increasing interest due to their unique electronic and optoelectronic properties and their great potential applications in various other fields. Similar to 2D layered transition metal dichalcogenides (TMDs), MX also have the significant merits of ultrathin thickness, ultrahigh surface-to-volume ratio, and high compatibility with flexible devices. More impressively, in contrast with TMDCs, MX demonstrate many superior properties, such as direct band gap electronic structure, high carrier mobility, rare p-type electronic behaviors, high charge density, and so on. These unique characteristics cause high-performance device applications in electronics, optoelectronics, and optics. In this review, we aim to provide a summary of the state-of-the-art of research activities in 2D layered MX materials. The scope of the review covers the synthesis and properties of 2D layered MX materials and their van der Waals heterostructures. We especially focus on the applications in electronics and optoelectronics. Moreover, the review concludes with some perspectives on future developments in this field.
III-VI 族化合物 MX（M = Ga、In；X = S、Se、Te）是一类重要的二维层状材料，由于其独特的电子和光电特性以及在其他各种领域的巨大应用潜力，目前引起了越来越多的关注。与二维层状过渡金属二卤化物（TMDs）类似，MX 也具有超薄厚度、超高的表面积与体积比以及与柔性器件高度兼容的显著优点。更令人印象深刻的是，与 TMDCs 相比，MX 表现出许多优越的特性，如直接带隙电子结构、高载流子迁移率、罕见的 p 型电子行为、高电荷密度等。这些独特的特性使得它们在电子学、光电学和光学领域具有高性能器件的应用前景。在本综述中，我们旨在总结二维层状 MX 材料研究活动的最新进展。综述的范围涵盖了二维层状 MX 材料及其范德瓦尔斯异质结构的合成和性质，并特别关注在电子学和光电学方面的应用。最后，本文对该领域的未来发展进行了展望。
