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通过分级声子散射提高重带热电材料的品质因数

Enhancing the Figure of Merit of Heavy-Band Thermoelectric Materials Through Hierarchical Phonon Scattering.

作者信息

Fu Chenguang, Wu Haijun, Liu Yintu, He Jiaqing, Zhao Xinbing, Zhu Tiejun

机构信息

State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 P.R. China.

Department of Physics South University of Science and Technology of China Shenzhen 518055 P.R. China; Department of Materials Science and Engineering National University of Singapore 7 Engineering Drive 1 Singapore 117575 Singapore.

出版信息

Adv Sci (Weinh). 2016 Mar 15;3(8):1600035. doi: 10.1002/advs.201600035. eCollection 2016 Aug.

DOI:10.1002/advs.201600035
PMID:27812482
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5069587/
Abstract

is suggested as an effective strategy to enhance the figure of merit of heavy-band thermoelectric materials. Heavy-band FeNbSb half-Heusler system with intrinsically low carrier mean free path is demonstrated as a paradigm. An enhanced of 1.34 is obtained at 1150 K for the FeNbTiSb compound with intentionally designed hierarchical scattering centers.

摘要

被认为是提高重带热电材料品质因数的有效策略。具有固有低载流子平均自由程的重带FeNbSb半赫斯勒体系被证明是一个范例。对于具有故意设计的分级散射中心的FeNbTiSb化合物，在1150 K时获得了1.34的增强值。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4670/5115478/ebb51a8c37e4/ADVS-3-0m-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4670/5115478/0db05bc7e94c/ADVS-3-0m-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4670/5115478/20a95356d2c8/ADVS-3-0m-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4670/5115478/77b39f658b53/ADVS-3-0m-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4670/5115478/ebb51a8c37e4/ADVS-3-0m-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4670/5115478/0db05bc7e94c/ADVS-3-0m-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4670/5115478/20a95356d2c8/ADVS-3-0m-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4670/5115478/77b39f658b53/ADVS-3-0m-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4670/5115478/ebb51a8c37e4/ADVS-3-0m-g004.jpg

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