HP Labs, HP Inc., Palo Alto, California 94304, USA.
School of Electrical &Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 639798, Singapore.
Sci Rep. 2017 Jan 5;7:40135. doi: 10.1038/srep40135.
We propose and demonstrate a novel physical computing paradigm based on an engineered unipolar memristor that exhibits symmetric SET switching with respect to voltage polarity. A one-dimensional array of these devices was sufficient to demonstrate an efficient Hamming distance comparator for two strings of analog states represented by voltages from the physical world. The comparator first simultaneously applies the two sets of voltages to the array of memristors, each of which is initially in its high resistance state and switches to its low resistance state only if the two voltages applied on that memristor differ by more than the switching threshold. An accurate analog representation of the Hamming distance is then obtained by applying a reading voltage to the memristors and summing all the resultant currents. The comparator with a small footprint can directly process analog signals and store computation results without power, representing a promising application for analog computing based on memristor crossbar arrays.
我们提出并展示了一种基于工程化单极忆阻器的新型物理计算范例，该范例在电压极性方面表现出对称的 SET 切换。这些器件的一维阵列足以证明高效的汉明距离比较器，用于比较由物理世界中的电压表示的两个模拟状态字符串。该比较器首先同时将两组电压施加到忆阻器阵列上，每个忆阻器在初始时处于高电阻状态，只有当施加在该忆阻器上的两个电压之间的差值超过切换阈值时，才会切换到低电阻状态。然后，通过向忆阻器施加读取电压并汇总所有产生的电流，可获得汉明距离的准确模拟表示。该比较器具有小的占地面积，可以直接处理模拟信号并在无需电源的情况下存储计算结果，代表了基于忆阻器交叉阵列的模拟计算的一个有前途的应用。
