Poulton Christopher V, Byrd Matthew J, Raval Manan, Su Zhan, Li Nanxi, Timurdogan Erman, Coolbaugh Douglas, Vermeulen Diedrik, Watts Michael R
Opt Lett. 2017 Jan 1;42(1):21-24. doi: 10.1364/OL.42.000021.
We demonstrate passive large-scale nanophotonic phased arrays in a CMOS-compatible silicon photonic platform. Silicon nitride waveguides are used to allow for higher input power and lower phase variation compared to a silicon-based distribution network. A phased array at an infrared wavelength of 1550 nm is demonstrated with an ultra-large aperture size of 4 mm×4 mm, achieving a record small and near diffraction-limited spot size of 0.021°×0.021° with a side lobe suppression of 10 dB. A main beam power of 400 mW is observed. Using the same silicon nitride platform and phased array architecture, we also demonstrate, to the best of our knowledge, the first large-aperture visible nanophotonic phased array at 635 nm with an aperture size of 0.5 mm×0.5 mm and a spot size of 0.064°×0.074°.
我们在与CMOS兼容的硅光子平台上展示了无源大规模纳米光子相控阵。与基于硅的分布网络相比，氮化硅波导可实现更高的输入功率和更低的相位变化。我们展示了一个孔径尺寸为4 mm×4 mm的超大型1550 nm红外波长相控阵，实现了创纪录的小且接近衍射极限的光斑尺寸0.021°×0.021°，旁瓣抑制为10 dB。观察到主光束功率为400 mW。据我们所知，使用相同的氮化硅平台和相控阵架构，我们还展示了首个孔径尺寸为0.5 mm×0.5 mm、光斑尺寸为0.064°×0.074°的635 nm大孔径可见纳米光子相控阵。
