Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, UK.
ICFO Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels, Barcelona, Spain.
Nat Commun. 2017 Jan 31;8:14311. doi: 10.1038/ncomms14311.
There is a growing number of applications demanding highly sensitive photodetectors in the mid-infrared. Thermal photodetectors, such as bolometers, have emerged as the technology of choice, because they do not need cooling. The performance of a bolometer is linked to its temperature coefficient of resistance (TCR, ∼2-4% K for state-of-the-art materials). Graphene is ideally suited for optoelectronic applications, with a variety of reported photodetectors ranging from visible to THz frequencies. For the mid-infrared, graphene-based detectors with TCRs ∼4-11% K have been demonstrated. Here we present an uncooled, mid-infrared photodetector, where the pyroelectric response of a LiNbO crystal is transduced with high gain (up to 200) into resistivity modulation for graphene. This is achieved by fabricating a floating metallic structure that concentrates the pyroelectric charge on the top-gate capacitor of the graphene channel, leading to TCRs up to 900% K, and the ability to resolve temperature variations down to 15 μK.
越来越多的应用需要在中红外波段使用高灵敏度的光电探测器。热光电探测器(如测辐射热计)已成为首选技术,因为它们不需要冷却。测辐射热计的性能与其电阻温度系数(TCR,对于最先进的材料约为 2-4%K)有关。石墨烯非常适合光电应用,已经有多种报道的光电探测器,涵盖从可见光到太赫兹频率。对于中红外波段,已经有基于石墨烯的 TCR 约为 4-11%K 的探测器得到了证明。在这里,我们提出了一种无需冷却的中红外光电探测器,其中 LiNbO 晶体的热释电响应通过高增益(高达 200)转换为石墨烯的电阻率调制。这是通过制造一个悬浮的金属结构来实现的,该结构将热释电电荷集中在石墨烯通道的顶部栅电容器上,从而实现 TCR 高达 900%K,并且能够分辨低至 15μK 的温度变化。