Norman Justin, Kennedy M J, Selvidge Jennifer, Li Qiang, Wan Yating, Liu Alan Y, Callahan Patrick G, Echlin McLean P, Pollock Tresa M, Lau Kei May, Gossard Arthur C, Bowers John E
Opt Express. 2017 Feb 20;25(4):3927-3934. doi: 10.1364/OE.25.003927.
High performance III-V lasers at datacom and telecom wavelengths on on-axis (001) Si are needed for scalable datacenter interconnect technologies. We demonstrate electrically injected quantum dot lasers grown on on-axis (001) Si patterned with {111} v-grooves lying in the [110] direction. No additional Ge buffers or substrate miscut was used. The active region consists of five InAs/InGaAs dot-in-a-well layers. We achieve continuous wave lasing with thresholds as low as 36 mA and operation up to 80°C.
对于可扩展的数据中心互连技术而言，需要在轴向（001）硅上实现工作在数据通信和电信波长的高性能III-V族激光器。我们展示了在轴向（001）硅上生长的电注入量子点激光器，该硅衬底上刻有沿[110]方向的{111} V型槽。未使用额外的锗缓冲层或衬底错切。有源区由五个InAs/InGaAs阱中量子点层组成。我们实现了阈值低至36 mA的连续波激射，并且可在高达80°C的温度下工作。
