Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Korea.
Nanoscale. 2017 May 11;9(18):6151-6157. doi: 10.1039/c7nr01501a.
2D semiconductors, including transition metal dichalcogenides (TMDs), have been widely studied recently. However, the device performance is deteriorated due to the significant contact resistance. The contact resistance of MoS-metal contacts decreases with the thickness of MoS. We obtained a Schottky barrier height as low as about 70 meV when MoS is trilayer-thick. It is important to find the optimal choice of contact metal and layer thickness of MoS.
二维半导体，包括过渡金属二硫属化物（TMDs），最近受到了广泛的研究。然而，由于显著的接触电阻，器件性能会恶化。MoS 与金属的接触电阻随 MoS 厚度的减少而降低。当 MoS 为三层厚度时，我们得到了低至约 70meV 的肖特基势垒高度。找到 MoS 的最佳接触金属和层厚选择非常重要。
