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过渡金属二卤族化合物单层中光学折射率的超大调控能力。

Giant Gating Tunability of Optical Refractive Index in Transition Metal Dichalcogenide Monolayers.

机构信息

Department of Chemistry, Temple University , Philadelphia, Pennsylvania 19405, United States.

Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Wuhan Institute of Technology , Wuhan, 430205, P. R. China.

出版信息

Nano Lett. 2017 Jun 14;17(6):3613-3618. doi: 10.1021/acs.nanolett.7b00768. Epub 2017 May 22.

Abstract

We report that the refractive index of transition metal dichacolgenide (TMDC) monolayers, such as MoS, WS, and WSe, can be substantially tuned by >60% in the imaginary part and >20% in the real part around exciton resonances using complementary metal-oxide-semiconductor (CMOS) compatible electrical gating. This giant tunablility is rooted in the dominance of excitonic effects in the refractive index of the monolayers and the strong susceptibility of the excitons to the influence of injected charge carriers. The tunability mainly results from the effects of injected charge carriers to broaden the spectral width of excitonic interband transitions and to facilitate the interconversion of neutral and charged excitons. The other effects of the injected charge carriers, such as renormalizing bandgap and changing exciton binding energy, only play negligible roles. We also demonstrate that the atomically thin monolayers, when combined with photonic structures, can enable the efficiencies of optical absorption (reflection) tuned from 40% (60%) to 80% (20%) due to the giant tunability of the refractive index. This work may pave the way toward the development of field-effect photonics in which the optical functionality can be controlled with CMOS circuits.

摘要

我们报告称,过渡金属二卤代物(TMDC)单层,如 MoS、WS 和 WSe,其折射率在激子共振附近的虚部可通过互补金属氧化物半导体(CMOS)兼容的电门控实现超过 60%的大幅调谐,实部可实现超过 20%的调谐。这种巨大的可调谐性源于单层折射率中激子效应的主导地位,以及激子对注入电荷载流子影响的强烈敏感性。可调谐性主要源于注入电荷载流子的影响,这些影响会拓宽激子带间跃迁的光谱宽度,并促进中性和带电激子之间的相互转换。注入电荷载流子的其他影响,如重整化能隙和改变激子结合能,仅起到微不足道的作用。我们还证明,当原子薄的单层与光子结构结合时,由于折射率的巨大可调谐性,光吸收(反射)效率可以从 40%(60%)调谐到 80%(20%)。这项工作可能为发展场效应光子学铺平道路,其中光学功能可以通过 CMOS 电路进行控制。

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