Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 162 00 Praha 6, Czech Republic.
School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.
Nat Commun. 2017 May 19;8:15434. doi: 10.1038/ncomms15434.
Antiferromagnets offer a unique combination of properties including the radiation and magnetic field hardness, the absence of stray magnetic fields, and the spin-dynamics frequency scale in terahertz. Recent experiments have demonstrated that relativistic spin-orbit torques can provide the means for an efficient electric control of antiferromagnetic moments. Here we show that elementary-shape memory cells fabricated from a single-layer antiferromagnet CuMnAs deposited on a III-V or Si substrate have deterministic multi-level switching characteristics. They allow for counting and recording thousands of input pulses and responding to pulses of lengths downscaled to hundreds of picoseconds. To demonstrate the compatibility with common microelectronic circuitry, we implemented the antiferromagnetic bit cell in a standard printed circuit board managed and powered at ambient conditions by a computer via a USB interface. Our results open a path towards specialized embedded memory-logic applications and ultra-fast components based on antiferromagnets.
反铁磁体具有独特的性质组合，包括辐射和磁场硬度、不存在杂散磁场以及太赫兹范围内的自旋动力学频率范围。最近的实验表明，相对论自旋轨道扭矩可以为反铁磁矩的有效电控制提供手段。在这里，我们展示了由沉积在 III-V 或 Si 衬底上的单层反铁磁体 CuMnAs 制成的基本形状记忆单元具有确定性的多级开关特性。它们允许对数千个输入脉冲进行计数和记录，并对缩小到数百皮秒的脉冲做出响应。为了展示与常见微电子电路的兼容性，我们在标准印刷电路板中实现了反铁磁比特单元，该单元在环境条件下由计算机通过 USB 接口进行管理和供电。我们的结果为基于反铁磁体的专用嵌入式存储逻辑应用和超快速组件开辟了道路。
