Department of Materials Science and Engineering, Johns Hopkins University, 3400 N, Charles St, Baltimore, USA.
Hazards Monitoring BioNano Research Center, Korea Research Institute of Bioscience and Biotechnology, 125 Gwahak-Ro, Yuseong-Gu, Daejeon, 305-806, South Korea.
Sci Rep. 2017 Jul 18;7(1):5728. doi: 10.1038/s41598-017-06040-2.
Inorganic amorphous oxide semiconductor (AOS) materials such as amorphous InGaZnO (a-IGZO) possess mechanical flexibility and outstanding electrical properties, and have generated great interest for use in flexible and transparent electronic devices. In the past, however, AOS devices required higher activation energies, and hence higher processing temperatures, than organic ones to neutralize defects. It is well known that one-dimensional nanowires tend to have better carrier mobility and mechanical strength along with fewer defects than the corresponding two-dimensional films, but until now it has been difficult, costly, and impractical to fabricate such nanowires in proper alignments by either "bottom-up" growth techniques or by "top-down" e-beam lithography. Here we show a top-down, cost-effective, and scalable approach for the fabrication of parallel, laterally oriented AOS nanoribbons based on lift-off and nano-imprinting. High mobility (132 cm/Vs), electrical stability, and transparency are obtained in a-IGZO nanoribbons, compared to the planar films of the same a-IGZO semiconductor.
无机非晶氧化物半导体（AOS）材料，如非晶铟镓锌氧化物（a-IGZO），具有机械柔韧性和出色的电学性能，在柔性透明电子器件中引起了极大的兴趣。然而，过去 AOS 器件需要比有机器件更高的激活能，因此需要更高的处理温度来中和缺陷。众所周知，一维纳米线比相应的二维薄膜具有更好的载流子迁移率和机械强度，并且缺陷更少，但直到现在，通过“自上而下”的生长技术或“自上而下”的电子束光刻来以适当的取向制造这种纳米线既困难、昂贵又不切实际。在这里，我们展示了一种基于剥离和纳米压印的自上而下、具有成本效益且可扩展的方法，用于制造平行、横向取向的 AOS 纳米带。与相同的 a-IGZO 半导体的平面薄膜相比，a-IGZO 纳米带具有较高的迁移率（132 cm/Vs）、电稳定性和透明度。
