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通过各向异性的Dzyaloshinskii-Moriya相互作用在界面处稳定的反斯格明子。

Antiskyrmions stabilized at interfaces by anisotropic Dzyaloshinskii-Moriya interactions.

作者信息

Hoffmann Markus, Zimmermann Bernd, Müller Gideon P, Schürhoff Daniel, Kiselev Nikolai S, Melcher Christof, Blügel Stefan

机构信息

Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425, Jülich, Germany.

Science Institute of the University of Iceland, VR-III, 107, Reykjavík, Iceland.

出版信息

Nat Commun. 2017 Aug 21;8(1):308. doi: 10.1038/s41467-017-00313-0.

Abstract

Chiral magnets are an emerging class of topological matter harboring localized and topologically protected vortex-like magnetic textures called skyrmions, which are currently under intense scrutiny as an entity for information storage and processing. Here, on the level of micromagnetics we rigorously show that chiral magnets can not only host skyrmions but also antiskyrmions as least energy configurations over all non-trivial homotopy classes. We derive practical criteria for their occurrence and coexistence with skyrmions that can be fulfilled by (110)-oriented interfaces depending on the electronic structure. Relating the electronic structure to an atomistic spin-lattice model by means of density functional calculations and minimizing the energy on a mesoscopic scale by applying spin-relaxation methods, we propose a double layer of Fe grown on a W(110) substrate as a practical example. We conjecture that ultra-thin magnetic films grown on semiconductor or heavy metal substrates with C symmetry are prototype classes of materials hosting magnetic antiskyrmions.Skyrmions, localized defects in the magnetization, can be stabilised in materials by the Dzyaloshinskii-Moriya interaction (DMI). Hoffmann et al. predict that, when the DMI is anisotropic, antiskyrmions can be formed and coexist with skyrmions, enabling studies and exploitation of their interactions.

摘要

手性磁体是一类新兴的拓扑物质,其具有被称为斯格明子的局域化且受拓扑保护的类涡旋磁结构,目前作为信息存储和处理的实体正受到密切关注。在此,在微磁学层面,我们严格证明了手性磁体不仅可以容纳斯格明子,而且在所有非平凡同伦类中,反斯格明子也是能量最低的构型。我们推导了它们出现以及与斯格明子共存的实际标准,这些标准可由取决于电子结构的(110)取向界面满足。通过密度泛函计算将电子结构与原子自旋 - 晶格模型联系起来,并应用自旋弛豫方法在介观尺度上使能量最小化,我们提出在W(110)衬底上生长的双层铁作为一个实际例子。我们推测,在具有C对称性的半导体或重金属衬底上生长的超薄磁性薄膜是承载磁反斯格明子的原型材料类别。斯格明子作为磁化中的局域缺陷,可以通过Dzyaloshinskii - Moriya相互作用(DMI)在材料中稳定存在。霍夫曼等人预测,当DMI是各向异性时,可以形成反斯格明子并与斯格明子共存,从而能够研究和利用它们之间的相互作用。

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