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一种用于高脉冲剂量平面平行腔中体积复合的新模型。

A new model for volume recombination in plane-parallel chambers in pulsed fields of high dose-per-pulse.

作者信息

Gotz M, Karsch L, Pawelke J

机构信息

OncoRay-National Center for Radiation Research in Oncology, Faculty of Medicine and University Hospital Carl Gustav Carus, Technische Universität Dresden, Fetscherstr. 74, PF 41, 01307 Dresden, Germany.

出版信息

Phys Med Biol. 2017 Nov 1;62(22):8634-8654. doi: 10.1088/1361-6560/aa8985.

Abstract

In order to describe the volume recombination in a pulsed radiation field of high dose-per-pulse this study presents a numerical solution of a 1D transport model of the liberated charges in a plane-parallel ionization chamber. In addition, measurements were performed on an Advanced Markus ionization chamber in a pulsed electron beam to obtain suitable data to test the calculation. The experiment used radiation pulses of 4 μs duration and variable dose-per-pulse values up to about 1 Gy, as well as pulses of variable duration up to 308 [Formula: see text] at constant dose-per-pulse values between 85 mGy and 400 mGy. Those experimental data were compared to the developed numerical model and existing descriptions of volume recombination. At low collection voltages the observed dose-per-pulse dependence of volume recombination can be approximated by the existing theory using effective parameters. However, at high collection voltages large discrepancies are observed. The developed numerical model shows much better agreement with the observations and is able to replicate the observed behavior over the entire range of dose-per-pulse values and collection voltages. Using the developed numerical model, the differences between observation and existing theory are shown to be the result of a large fraction of the charge being collected as free electrons and the resultant distortion of the electric field inside the chamber. Furthermore, the numerical solution is able to calculate recombination losses for arbitrary pulse durations in good agreement with the experimental data, an aspect not covered by current theory. Overall, the presented numerical solution of the charge transport model should provide a more flexible tool to describe volume recombination for high dose-per-pulse values as well as for arbitrary pulse durations and repetition rates.

摘要

为了描述高脉冲剂量辐射场中的体积复合,本研究给出了平行板电离室中自由电荷一维输运模型的数值解。此外,在脉冲电子束中的高级马库斯电离室上进行了测量,以获取合适的数据来检验计算结果。该实验使用了持续时间为4 μs、脉冲剂量可变(最高约1 Gy)的辐射脉冲,以及在85 mGy至400 mGy之间恒定脉冲剂量下持续时间可变(最长308 μs)的脉冲。将这些实验数据与所开发的数值模型以及现有的体积复合描述进行了比较。在低收集电压下,利用有效参数,现有理论可以近似描述观察到的体积复合对脉冲剂量的依赖性。然而,在高收集电压下,观察到了很大的差异。所开发的数值模型与观察结果显示出更好的一致性,并且能够在整个脉冲剂量值和收集电压范围内重现观察到的行为。利用所开发的数值模型,观察结果与现有理论之间的差异被证明是由于很大一部分电荷以自由电子形式被收集以及电离室内电场的由此产生的畸变所致。此外,该数值解能够计算任意脉冲持续时间下的复合损失,与实验数据吻合良好,这是当前理论未涵盖的一个方面。总体而言,所给出的电荷输运模型的数值解应为描述高脉冲剂量值以及任意脉冲持续时间和重复率下的体积复合提供一个更灵活的工具。

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