Department of Electrical and Computer Engineering , University of Nebraska-Lincoln , Lincoln , Nebraska 68588-0511 , United States.
Department of Physics and Astronomy , University of Nebraska-Lincoln , Lincoln , Nebraska 68588-0511 , United States.
Nano Lett. 2018 Mar 14;18(3):2021-2032. doi: 10.1021/acs.nanolett.7b05473. Epub 2018 Feb 7.
Single-crystal transition metal dichalcogenides (TMDs) and TMD-based heterojunctions have recently attracted significant research and industrial interest owing to their intriguing optical and electrical properties. However, the lack of a simple, low-cost, environmentally friendly, synthetic method and a poor understanding of the growth mechanism post a huge challenge to implementing TMDs in practical applications. In this work, we developed a novel approach for direct formation of high-quality, monolayer and few-layer MoS single crystal domains via a single-step rapid thermal processing of a sandwiched reactor with sulfur and molybdenum (Mo) film in a confined reaction space. An all-solid-phase growth mechanism was proposed and experimentally/theoretically evidenced by analyzing the surface potential and morphology mapping. Compared with the conventional chemical vapor deposition approaches, our method involves no complicated gas-phase reactant transfer or reactions and requires very small amount of solid precursors [e.g., Mo (∼3 μg)], no carrier gas, no pretreatment of the precursor, no complex equipment design, thereby facilitating a simple, low-cost, and environmentally friendly growth. Moreover, we examined the symmetry, defects, and stacking phase in as-grown MoS samples using simultaneous second-harmonic-/sum-frequency-generation (SHG/SFG) imaging. For the first time, we observed that the SFG (peak intensity/position) polarization can be used as a sensitive probe to identify the orientation of TMDs' crystallographic axes. Furthermore, we fabricated ferroelectric programmable Schottky junction devices via local domain patterning using the as-grown, single-crystal monolayer MoS, revealing their great potential in logic and optoelectronic applications. Our strategy thus provides a simple, low-cost, and scalable path toward a wide variety of TMD single crystal growth and novel functional device design.
单晶过渡金属二卤化物(TMD)和基于 TMD 的异质结由于其引人注目的光学和电学性质,最近引起了广泛的研究和工业兴趣。然而,缺乏简单、低成本、环保的合成方法以及对生长机制的理解不足,给 TMD 在实际应用中的实施带来了巨大的挑战。在这项工作中,我们通过在受限反应空间中使用硫和钼(Mo)薄膜的夹层反应器的一步快速热处理,开发了一种直接形成高质量、单层和少层 MoS 单晶畴的新方法。通过分析表面电势和形貌映射,提出并实验/理论证明了全固相生长机制。与传统的化学气相沉积方法相比,我们的方法不涉及复杂的气相反应物转移或反应,并且只需要非常少量的固体前体[例如,Mo(约 3μg)]、无载气、无需对前体进行预处理、无需复杂的设备设计,从而实现了简单、低成本和环保的生长。此外,我们使用同时的二次谐波-/和频产生(SHG/SFG)成像来检查生长的 MoS 样品中的对称性、缺陷和堆叠相。我们首次观察到,SFG(峰值强度/位置)偏振可作为一种灵敏的探针来识别 TMD 晶体轴的取向。此外,我们通过使用生长的单晶单层 MoS 进行局部畴图案化来制造铁电可编程肖特基结器件,揭示了它们在逻辑和光电应用中的巨大潜力。因此,我们的策略为广泛的 TMD 单晶生长和新型功能器件设计提供了一种简单、低成本和可扩展的途径。