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一种用于高质量超薄二硫化钼单晶生长的简易空间限制固相硫化策略。

A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals.

机构信息

Department of Electrical and Computer Engineering , University of Nebraska-Lincoln , Lincoln , Nebraska 68588-0511 , United States.

Department of Physics and Astronomy , University of Nebraska-Lincoln , Lincoln , Nebraska 68588-0511 , United States.

出版信息

Nano Lett. 2018 Mar 14;18(3):2021-2032. doi: 10.1021/acs.nanolett.7b05473. Epub 2018 Feb 7.

Abstract

Single-crystal transition metal dichalcogenides (TMDs) and TMD-based heterojunctions have recently attracted significant research and industrial interest owing to their intriguing optical and electrical properties. However, the lack of a simple, low-cost, environmentally friendly, synthetic method and a poor understanding of the growth mechanism post a huge challenge to implementing TMDs in practical applications. In this work, we developed a novel approach for direct formation of high-quality, monolayer and few-layer MoS single crystal domains via a single-step rapid thermal processing of a sandwiched reactor with sulfur and molybdenum (Mo) film in a confined reaction space. An all-solid-phase growth mechanism was proposed and experimentally/theoretically evidenced by analyzing the surface potential and morphology mapping. Compared with the conventional chemical vapor deposition approaches, our method involves no complicated gas-phase reactant transfer or reactions and requires very small amount of solid precursors [e.g., Mo (∼3 μg)], no carrier gas, no pretreatment of the precursor, no complex equipment design, thereby facilitating a simple, low-cost, and environmentally friendly growth. Moreover, we examined the symmetry, defects, and stacking phase in as-grown MoS samples using simultaneous second-harmonic-/sum-frequency-generation (SHG/SFG) imaging. For the first time, we observed that the SFG (peak intensity/position) polarization can be used as a sensitive probe to identify the orientation of TMDs' crystallographic axes. Furthermore, we fabricated ferroelectric programmable Schottky junction devices via local domain patterning using the as-grown, single-crystal monolayer MoS, revealing their great potential in logic and optoelectronic applications. Our strategy thus provides a simple, low-cost, and scalable path toward a wide variety of TMD single crystal growth and novel functional device design.

摘要

单晶过渡金属二卤化物(TMD)和基于 TMD 的异质结由于其引人注目的光学和电学性质,最近引起了广泛的研究和工业兴趣。然而,缺乏简单、低成本、环保的合成方法以及对生长机制的理解不足,给 TMD 在实际应用中的实施带来了巨大的挑战。在这项工作中,我们通过在受限反应空间中使用硫和钼(Mo)薄膜的夹层反应器的一步快速热处理,开发了一种直接形成高质量、单层和少层 MoS 单晶畴的新方法。通过分析表面电势和形貌映射,提出并实验/理论证明了全固相生长机制。与传统的化学气相沉积方法相比,我们的方法不涉及复杂的气相反应物转移或反应,并且只需要非常少量的固体前体[例如,Mo(约 3μg)]、无载气、无需对前体进行预处理、无需复杂的设备设计,从而实现了简单、低成本和环保的生长。此外,我们使用同时的二次谐波-/和频产生(SHG/SFG)成像来检查生长的 MoS 样品中的对称性、缺陷和堆叠相。我们首次观察到,SFG(峰值强度/位置)偏振可作为一种灵敏的探针来识别 TMD 晶体轴的取向。此外,我们通过使用生长的单晶单层 MoS 进行局部畴图案化来制造铁电可编程肖特基结器件,揭示了它们在逻辑和光电应用中的巨大潜力。因此,我们的策略为广泛的 TMD 单晶生长和新型功能器件设计提供了一种简单、低成本和可扩展的途径。

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