Ahn Joonsung, Kim Tae Whan
Department of Electronics and Computer Engineering, Hanyang University, Seoul 04763, South Korea.
J Nanosci Nanotechnol. 2018 Mar 1;18(3):1837-1840. doi: 10.1166/jnn.2018.14986.
The effect of the curved fin top edge on the electrical characteristics of FinFETs was investigated. The curvature radius of the fin top edge for the FinFETs was changed from 0 to 5 nm in order to determine the optimum condition of the electrical characteristics for the devices. The on-current level of the FinFETs with a curvature radius of 5 nm of fin top edge was 24.45% larger than that of the FinFETs with a cuboid fin. The electron current density and the electron mobility of the fin top edge for the FinFETs were larger than those for the FinFETs with a cuboid fin. The electrical characteristics of the FinFETs with a curvature radius of 5 nm for the fin top edge showed the best performance due to the largest expansion of the effective channel region.
研究了弯曲鳍片顶部边缘对鳍式场效应晶体管（FinFET）电学特性的影响。为了确定器件电学特性的最佳条件，将FinFET鳍片顶部边缘的曲率半径从0改变到5纳米。鳍片顶部边缘曲率半径为5纳米的FinFET的导通电流水平比具有长方体鳍片的FinFET大24.45%。FinFET鳍片顶部边缘的电子电流密度和电子迁移率比具有长方体鳍片的FinFET大。由于有效沟道区域的最大扩展，鳍片顶部边缘曲率半径为5纳米的FinFET的电学特性表现出最佳性能。
