弯曲鳍片顶部边缘对鳍式场效应晶体管电学特性的影响

Effect of the Curved Fin Top Edge on the Electrical Characteristics of FinFETs.

作者信息

Ahn Joonsung, Kim Tae Whan

机构信息

Department of Electronics and Computer Engineering, Hanyang University, Seoul 04763, South Korea.

出版信息

J Nanosci Nanotechnol. 2018 Mar 1;18(3):1837-1840. doi: 10.1166/jnn.2018.14986.

DOI:10.1166/jnn.2018.14986

PMID:29448668

Abstract

The effect of the curved fin top edge on the electrical characteristics of FinFETs was investigated. The curvature radius of the fin top edge for the FinFETs was changed from 0 to 5 nm in order to determine the optimum condition of the electrical characteristics for the devices. The on-current level of the FinFETs with a curvature radius of 5 nm of fin top edge was 24.45% larger than that of the FinFETs with a cuboid fin. The electron current density and the electron mobility of the fin top edge for the FinFETs were larger than those for the FinFETs with a cuboid fin. The electrical characteristics of the FinFETs with a curvature radius of 5 nm for the fin top edge showed the best performance due to the largest expansion of the effective channel region.

摘要

研究了弯曲鳍片顶部边缘对鳍式场效应晶体管（FinFET）电学特性的影响。为了确定器件电学特性的最佳条件，将FinFET鳍片顶部边缘的曲率半径从0改变到5纳米。鳍片顶部边缘曲率半径为5纳米的FinFET的导通电流水平比具有长方体鳍片的FinFET大24.45%。FinFET鳍片顶部边缘的电子电流密度和电子迁移率比具有长方体鳍片的FinFET大。由于有效沟道区域的最大扩展，鳍片顶部边缘曲率半径为5纳米的FinFET的电学特性表现出最佳性能。