Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA.
NG Next, Northrop Grumman Corporation, One Space Park, Redondo Beach, Los Angeles, CA, 90278, USA.
Nat Commun. 2018 Jun 28;9(1):2524. doi: 10.1038/s41467-018-04934-x.
Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10 Ω are achievable, making MoS atomristors suitable as energy-efficient radio-frequency (RF) switches. MoS RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches. Furthermore, MoS switches are fully electronic and can be integrated on arbitrary substrates unlike phase-change RF switches. High-frequency results reveal that a key figure of merit, the cutoff frequency (f), is about 10 THz for sub-μm switches with favorable scaling that can afford f above 100 THz for nanoscale devices, exceeding the performance of contemporary switches that suffer from an area-invariant scaling. These results indicate a new electronic application of TMDs as non-volatile switches for communication platforms, including mobile systems, low-power internet-of-things, and THz beam steering.
最近，在过渡金属二硫属化物（TMD）垂直器件中发现了非易失性电阻开关或忆阻器（等效的，原子层中的原子阻器）效应。由于单层薄的传输和高晶体质量，可实现低于 10 Ω的导通电阻，使得 MoS 原子阻器适合作为节能射频（RF）开关。MoS RF 开关具有零保持电压，因此，零静态功耗，克服了晶体管和机械开关的限制。此外，MoS 开关完全是电子的，并且可以像相变 RF 开关一样集成在任意衬底上。高频结果表明，对于亚微米开关，一个关键的衡量标准，截止频率（f）约为 10 THz，具有有利的缩放比例，可以为纳米级器件提供高于 100 THz 的 f，超过了当前开关的性能，当前开关由于面积不变的缩放而受到限制。这些结果表明 TMD 作为非易失性开关在通信平台中的新的电子应用，包括移动系统、低功耗物联网和太赫兹波束转向。
