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基于氧化铪忆阻器的柔性射频开关。

HfO Memristor-Based Flexible Radio Frequency Switches.

作者信息

Chen Shih-Chieh, Yang Yu-Tao, Tseng Yun-Chien, Chiou Kun-Dong, Huang Po-Wei, Chih Jia-Hao, Liu Hsien-Yang, Chou Tsung-Te, Jhang Yang-Yu, Chen Chien-Wei, Kuan Chun-Hsiao, Ho E Ming, Chien Chao-Hsin, Kuo Chien-Nan, Cheng Yu-Ting, Lien Der-Hsien

机构信息

Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan.

Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan.

出版信息

ACS Nano. 2025 Jan 14;19(1):704-711. doi: 10.1021/acsnano.4c11846. Epub 2024 Dec 20.

DOI:10.1021/acsnano.4c11846
PMID:39704722
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11752509/
Abstract

Flexible and wearable electronics are experiencing rapid growth due to the increasing demand for multifunctional, lightweight, and portable devices. However, the growing demands of interactive applications driven by the rise of AI reveal the inadequate connectivity of current connection technologies. In this work, we successfully leverage memristive technology to develop a flexible radio frequency (RF) switch, optimized for 6G-compatible communication systems and adaptable to flexible applications. The flexible RF switch demonstrates a low insertion loss (2 dB) and a cutoff frequency exceeding 840 GHz, and performance metrics are maintained after 10 switching cycles and 2500 mechanical bending cycles, showing excellent reliability and robustness. Furthermore, the RF switch is fully integrable with a photolithography-processable polyimide (PSPI) substrate, enabling efficient 2.5D integration with other RF components, such as RF antennas and interconnects. This technology holds significant promise to advance 6G communications in flexible electronics, offering a scalable solution for high-speed data transmission in next-generation wearable devices.

摘要

由于对多功能、轻便和便携式设备的需求不断增加,柔性可穿戴电子设备正在迅速发展。然而,由人工智能的兴起驱动的交互式应用的不断增长的需求揭示了当前连接技术的连接性不足。在这项工作中,我们成功地利用忆阻技术开发了一种柔性射频(RF)开关,该开关针对6G兼容通信系统进行了优化,并适用于柔性应用。该柔性射频开关具有低插入损耗(2 dB)和超过840 GHz的截止频率,并且在10个开关周期和2500个机械弯曲周期后性能指标保持不变,显示出优异的可靠性和鲁棒性。此外,该射频开关可与光刻可加工的聚酰亚胺(PSPI)基板完全集成,从而实现与其他射频组件(如射频天线和互连)的高效2.5D集成。这项技术有望推动柔性电子领域的6G通信发展,为下一代可穿戴设备中的高速数据传输提供可扩展的解决方案。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/260d/11752509/709edd3ac8ab/nn4c11846_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/260d/11752509/ebb05c13e1a5/nn4c11846_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/260d/11752509/740706255863/nn4c11846_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/260d/11752509/cf50225ac891/nn4c11846_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/260d/11752509/d38c81c35b45/nn4c11846_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/260d/11752509/709edd3ac8ab/nn4c11846_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/260d/11752509/ebb05c13e1a5/nn4c11846_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/260d/11752509/740706255863/nn4c11846_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/260d/11752509/cf50225ac891/nn4c11846_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/260d/11752509/d38c81c35b45/nn4c11846_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/260d/11752509/709edd3ac8ab/nn4c11846_0005.jpg

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