Molecular Plant Physiology Laboratory, Department of Botany, University of Rajshahi, Rajshahi, 6205, Bangladesh.
Molecular Biology and Protein Science Laboratory, Department of Genetic Engineering and Biotechnology, University of Rajshahi, Rajshahi, 6205, Bangladesh.
Sci Rep. 2018 Jul 12;8(1):10498. doi: 10.1038/s41598-018-28960-3.
This study investigates the effect and mechanisms of low pressure dielectric barrier discharge (LPDBD) produced with Ar/O and Ar/Air technique causing biological stimulation leading to improved germination and growth in wheat. Both plasma treatments caused rougher and chapped seed surface along with noticeable improvement in seed germination in wheat. Beside this, seed HO concentration significantly increased compared to controls subjected to Ar/O and Ar/Air while this phenomenon was more pronounced due to Ar/Air plasma. Analysis of plants grown from the plasma treated seeds showed significant improvement in shoot characteristics, iron concentration, total soluble protein and sugar concentration in comparison with the controls more efficiently due to Ar/O plasma than that of Ar/Air. Further, none of the plasma treatments caused membrane damage or cell death in root and shoot of wheat. Interestingly, Ar/O treated plants showed a significant increase (2-fold) of HO compared to controls in both root and shoot, while Ar/Air plasma caused no changes in HO. This phenomenon was supported by the biochemical and molecular evidence of SOD, APX and CAT in wheat plants. Plants derived from Ar/O treated seeds demonstrated a significant increase in SOD activity and TaSOD expression in roots of wheat, while APX and CAT activities along with TaCAT and TaAPX expression showed no significant changes. In contrast, Ar/Air plasma caused a significant increase only in APX activity in the shoot. This suggests that Ar/O plasma caused a slight induction in HO accumulation without triggering the HO scavengers (APX and CAT) and thus, efficiency affect growth and development in wheat plants. Further, grafting of control and Ar/O treated plants showed a significant increase in shoot biomass and HO concentration in grafts having Ar/O rootstock regardless of the type scion attached to it. It indicates that signal driving Ar/O plasma mediated growth improvement in wheat is possibly originated in roots. Taken together, this paper delivers new insight into the mechanistic basis for growth improvement by LPDBD technique.
本研究探讨了在 Ar/O 和 Ar/Air 技术产生的低压介质阻挡放电(LPDBD)作用下,生物刺激导致小麦发芽和生长改善的效果和机制。两种等离子体处理都导致种子表面变得更加粗糙和干裂,并显著提高了小麦的发芽率。此外,与对照相比,Ar/O 和 Ar/Air 等离子体处理的种子中 HO 浓度显著增加,而 Ar/Air 等离子体处理的效果更为显著。对等离子体处理种子生长的植株进行分析表明,与对照相比,由于 Ar/O 等离子体的作用, shoot 特性、铁浓度、总可溶性蛋白和糖浓度都有显著提高。此外,等离子体处理不会引起小麦根和 shoot 的膜损伤或细胞死亡。有趣的是,与对照相比,Ar/O 处理的植物在根和 shoot 中 HO 都显著增加(增加了 2 倍),而 Ar/Air 等离子体处理没有引起 HO 的变化。这一现象得到了小麦植株中 SOD、APX 和 CAT 的生化和分子证据的支持。与对照相比,Ar/O 处理的种子衍生的植物在小麦根中 SOD 活性和 TaSOD 表达显著增加,而 APX 和 CAT 活性以及 TaCAT 和 TaAPX 表达没有显著变化。相比之下,Ar/Air 等离子体仅在 shoot 中引起 APX 活性的显著增加。这表明 Ar/O 等离子体引起了 HO 积累的轻微诱导,而没有触发 HO 清除剂(APX 和 CAT),因此,效率影响了小麦植物的生长和发育。此外,无论接穗类型如何,将对照和 Ar/O 处理的植物嫁接后,接穗中的 shoot 生物量和 HO 浓度都显著增加。这表明,驱动 Ar/O 等离子体介导的小麦生长改善的信号可能源自根部。综上所述,本文为 LPDBD 技术促进生长的机制基础提供了新的见解。