Skaja Katharina, Andrä Michael, Rana Vikas, Waser Rainer, Dittmann Regina, Baeumer Christoph
Peter Grünberg Institute and JARA-FIT, FZ Jülich, D-52425, Jülich, Germany.
Institute for Electronic Materials, IWE2, RWTH Aachen University, D-52074, Aachen, Germany.
Sci Rep. 2018 Jul 18;8(1):10861. doi: 10.1038/s41598-018-28992-9.
In this study, we investigated the influence of oxygen non-stoichiometry on the resistive switching performance of tantalum oxide based memristive devices. Thin-films of tantalum oxide were deposited with varying sputter power and oxygen partial pressure. The electroforming voltage was found to decrease with increasing power density or decreased oxygen partial pressure, while the endurance remained stable and the resistance window R/R was found to increase. In-depth XPS analysis connects these observations to a controllable oxygen sub-stoichiometry in the sputter-deposited films. Our analysis shows that the decrease of the forming voltage results from an increase in carrier density in the as-prepared thin-films, which is induced by the presence of oxygen vacancies.
在本研究中，我们研究了氧非化学计量比对基于氧化钽的忆阻器件电阻开关性能的影响。通过改变溅射功率和氧分压来沉积氧化钽薄膜。发现随着功率密度的增加或氧分压的降低，电形成电压降低，而耐久性保持稳定，并且电阻窗口R/R增大。深入的X射线光电子能谱（XPS）分析将这些观察结果与溅射沉积薄膜中可控的氧亚化学计量联系起来。我们的分析表明，形成电压的降低是由制备的薄膜中载流子密度的增加引起的，这是由氧空位的存在所诱导的。
