Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA.
Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA, 94035, USA.
Nat Commun. 2018 Aug 10;9(1):3208. doi: 10.1038/s41467-018-05677-5.
Experimental demonstration of resistive neural networks has been the recent focus of hardware implementation of neuromorphic computing. Capacitive neural networks, which call for novel building blocks, provide an alternative physical embodiment of neural networks featuring a lower static power and a better emulation of neural functionalities. Here, we develop neuro-transistors by integrating dynamic pseudo-memcapacitors as the gates of transistors to produce electronic analogs of the soma and axon of a neuron, with "leaky integrate-and-fire" dynamics augmented by a signal gain on the output. Paired with non-volatile pseudo-memcapacitive synapses, a Hebbian-like learning mechanism is implemented in a capacitive switching network, leading to the observed associative learning. A prototypical fully integrated capacitive neural network is built and used to classify inputs of signals.
实验性地展示电阻神经网络已经成为神经形态计算硬件实现的近期焦点。电容神经网络需要新型的构建模块,为具有更低静态功率和更好模拟神经功能的神经网络提供了另一种物理体现。在这里,我们通过整合动态拟电容器作为晶体管的栅极来开发神经晶体管,从而产生神经元的胞体和轴突的电子模拟,其输出上的信号增益增强了“漏电积分和放电”动力学。与非易失性拟电容器突触配对,在电容开关网络中实现了类似赫布的学习机制,从而导致观察到的联想学习。构建并使用一个典型的全集成电容神经网络来对信号输入进行分类。