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具有单自旋寻址、交换控制和单量子点单-三重态读出功能的集成硅量子比特平台。

Integrated silicon qubit platform with single-spin addressability, exchange control and single-shot singlet-triplet readout.

机构信息

Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, NSW, 2052, Australia.

London Centre for Nanotechnology, UCL, 17-19 Gordon St, London, WC1H 0AH, UK.

出版信息

Nat Commun. 2018 Oct 30;9(1):4370. doi: 10.1038/s41467-018-06039-x.

Abstract

Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long coherence times accessible using Si enriched material. A scalable error-corrected quantum processor, however, will require control of many qubits in parallel, while performing error detection across the constituent qubits. Spin resonance techniques are a convenient path to parallel two-axis control, while Pauli spin blockade can be used to realize local parity measurements for error detection. Despite this, silicon qubit implementations have so far focused on either single-spin resonance control, or control and measurement via voltage-pulse detuning in the two-spin singlet-triplet basis, but not both simultaneously. Here, we demonstrate an integrated device platform incorporating a silicon metal-oxide-semiconductor double quantum dot that is capable of single-spin addressing and control via electron spin resonance, combined with high-fidelity spin readout in the singlet-triplet basis.

摘要

硅量子点自旋量子位由于其与传统 CMOS 制造的兼容性以及使用富硅材料可实现的长相干时间,为大规模量子计算提供了一个有前途的平台。然而,可扩展的纠错量子处理器将需要并行控制许多量子位,同时在组成量子位上执行错误检测。自旋共振技术是实现两轴并行控制的便捷途径,而泡利自旋阻塞可用于实现局部奇偶校验测量以进行错误检测。尽管如此,硅量子位的实现迄今为止主要集中在单自旋共振控制上,或者通过在双自旋单重态-三重态基中进行电压脉冲失谐来控制和测量,但不能同时进行。在这里,我们展示了一种集成器件平台,该平台包含一个硅金属氧化物半导体双量子点,能够通过电子自旋共振进行单自旋寻址和控制,并结合在单重态-三重态基中的高保真度自旋读出。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e23/6207676/3b45a72ff098/41467_2018_6039_Fig3_HTML.jpg

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