Zhang Anbang, Zhou Qi, Yang Chao, Shi Yuanyuan, Chen Wanjun, Li Zhaoji, Zhang Bo
School of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Nanoscale Res Lett. 2019 Jan 15;14(1):23. doi: 10.1186/s11671-019-2860-y.
An AlGaN/GaN lateral reverse blocking current regulating diode (RB-CRD) with trench Schottky anode and hybrid trench cathode has been proposed and experimentally demonstrated on silicon substrate. The Schottky barrier diode (SBD) integrated in the anode exhibits a turn-on voltage of 0.7 V and a reverse breakdown voltage of 260 V. The hybrid trench cathode acts as a CRD, which is in series connection with the anode SBD. A knee voltage of 1.3 V and a forward operation voltage beyond 200 V can be achieved for the RB-CRD. The RB-CRD is capable of outputting an excellent steady current in a wide temperature range from 25 to 300 °C. In addition, the forward regulating current exhibits small negative temperature coefficients less than - 0.152%/C.
一种具有沟槽肖特基阳极和混合沟槽阴极的AlGaN/GaN横向反向阻断电流调节二极管（RB-CRD）已被提出，并在硅衬底上进行了实验验证。集成在阳极中的肖特基势垒二极管（SBD）的开启电压为0.7V，反向击穿电压为260V。混合沟槽阴极作为一个CRD，与阳极SBD串联连接。该RB-CRD可实现1.3V的拐点电压和超过200V的正向工作电压。RB-CRD能够在25至300°C的宽温度范围内输出优异的稳定电流。此外，正向调节电流表现出小于-0.152%/°C的小负温度系数。
