Wu Lei, Liu Hongxia, Li Jiabin, Wang Shulong, Wang Xing
Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China.
Nanoscale Res Lett. 2019 May 28;14(1):177. doi: 10.1186/s11671-019-3015-x.
Non-volatile memory (NVM) will play a very important role in the next-generation digital technologies, including the Internet of things. The metal-oxide memristors, especially based on HfO, have been favored by lots of researchers because of its simple structure, high integration, fast operation speed, low power consumption, and high compatibility with advanced (complementary metal oxide silicon) CMOS technologies. In this paper, a 20-level stable resistance states Al-doped HfO-based memristor is presented. Its cycles endurance, data retention time, and resistance ratio are larger than 10, > 10 s, and > 10, respectively.
非易失性存储器（NVM）将在包括物联网在内的下一代数字技术中发挥非常重要的作用。金属氧化物忆阻器，尤其是基于HfO的忆阻器，因其结构简单、集成度高、运行速度快、功耗低以及与先进的（互补金属氧化物半导体）CMOS技术高度兼容而受到众多研究人员的青睐。本文提出了一种具有20级稳定电阻状态的掺铝HfO基忆阻器。其循环耐久性、数据保留时间和电阻比分别大于10、>10 s和>10。
