Wu Meng-Chyi, Chung Ming-Che, Wu Cheng-Yeu
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
Department of Surgery, Division of Plastic and Reconstructive Surgery, Veterans General Hospital, Taichung 40705, Taiwan.
Micromachines (Basel). 2022 Aug 19;13(8):1350. doi: 10.3390/mi13081350.
In this article, an active matrix (AM) micro light-emitting diode (MicroLED) display with a resolution of 1920 × 1080 and a high pixel density of 3200 pixels per inch (ppi) is reported. The single pixel with a diameter of 5 μm on the MicroLED array exhibits excellent characteristics, including a forward voltage of 2.8 V at 4.4 μA, an ideality factor of 1.7 in the forward bias of 2-3 V, an extremely low leakage current of 131 fA at -10 V, an external quantum efficiency of 6.5%, and a wall-plug efficiency of 6.6% at 10.2 A/cm, a light output power of 28.3 μW and brightness of 1.6 × 10 cd/m (nits) at 1 mA. The observed blue shift in the electroluminent peak wavelength is only 6.6 nm from 441.2 nm to 434.6 nm with increasing the current from 5 μA to 1 mA (from 10 to 5 × 10 A/cm). Through flip-chip bonding technology, the 1920 × 1080 bottom-emitting MicroLED display through the backside of a sapphire substrate can demonstrate high-resolution graphic images.
本文报道了一种分辨率为1920×1080且像素密度高达3200像素每英寸(ppi)的有源矩阵(AM)微型发光二极管(MicroLED)显示器。MicroLED阵列上直径为5μm的单个像素具有优异的特性,包括在4.4μA时正向电压为2.8V,在2 - 3V正向偏压下理想因子为1.7,在-10V时极低的漏电流为131fA,外部量子效率为6.5%,在10.2A/cm时壁插效率为6.6%,在1mA时光输出功率为28.3μW且亮度为1.6×10坎德拉每平方米(尼特)。随着电流从5μA增加到1mA(从10到5×10A/cm),电致发光峰值波长的观测蓝移仅为6.6nm,从441.2nm到434.6nm。通过倒装芯片键合技术,通过蓝宝石衬底背面的1920×1080底部发射MicroLED显示器能够展示高分辨率图形图像。