Choi Kiwoon, Jung Jaehoon, Kim Jongyoung, Lee Joonho, Lee Han Sup, Kang Il-Suk
Next E&M Research Institute, Environmental Research Center, 410 Jeongseojin-ro, Seo-gu, Incheon 22689, Korea.
Department of Chemical Engineering, Inha University, 100 Inha-ro, Nam-gu, Incheon 22212, Korea.
Micromachines (Basel). 2020 Feb 17;11(2):206. doi: 10.3390/mi11020206.
A new architecture for antireflection (AR) has been developed to break the trade-off between the optical transmittance and the electrical conduction impeding the performance of transparent conductive oxide (TCO) films. The tapered porous nanostructure with a complex continuous refractive index effectively eliminates reflections from the interfaces between air and the TCO and TCO and the substrate. Compared to the conventional TCO film, the AR TCO film exhibited the same electrical conduction, with an average transmittance of 88.7% in the 400-800 nm range, a 10.3% increase. The new AR TCO film is expected to improve the performance of various optoelectronic devices.
一种用于抗反射（AR）的新架构已经被开发出来，以打破在光学透过率和阻碍透明导电氧化物（TCO）薄膜性能的导电率之间的权衡。具有复杂连续折射率的锥形多孔纳米结构有效地消除了空气与TCO以及TCO与衬底之间界面的反射。与传统的TCO薄膜相比，抗反射TCO薄膜表现出相同的导电率，在400 - 800纳米范围内平均透过率为88.7%，提高了10.3%。新型抗反射TCO薄膜有望改善各种光电器件的性能。
