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用于发光器件的铟锡氧化物纳米线完全透明接触层的自下而上生长。

Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices.

作者信息

O'Dwyer C, Szachowicz M, Visimberga G, Lavayen V, Newcomb S B, Torres C M Sotomayor

机构信息

Department of Physics, and Materials and Surface Science Institute, University of Limerick, Limerick, Ireland.

出版信息

Nat Nanotechnol. 2009 Apr;4(4):239-44. doi: 10.1038/nnano.2008.418. Epub 2009 Feb 1.

Abstract

Thin layers of indium tin oxide are widely used as transparent coatings and electrodes in solar energy cells, flat-panel displays, antireflection coatings, radiation protection and lithium-ion battery materials, because they have the characteristics of low resistivity, strong absorption at ultraviolet wavelengths, high transmission in the visible, high reflectivity in the far-infrared and strong attenuation in the microwave region. However, there is often a trade-off between electrical conductivity and transparency at visible wavelengths for indium tin oxide and other transparent conducting oxides. Here, we report the growth of layers of indium tin oxide nanowires that show optimum electronic and photonic properties and demonstrate their use as fully transparent top contacts in the visible to near-infrared region for light-emitting devices.

摘要

氧化铟锡薄层被广泛用作太阳能电池、平板显示器、抗反射涂层、辐射防护和锂离子电池材料中的透明涂层和电极,因为它们具有低电阻率、在紫外波长处有强吸收、在可见光范围内有高透射率、在远红外有高反射率以及在微波区域有强衰减等特性。然而,对于氧化铟锡和其他透明导电氧化物而言,在可见光波长下的电导率和透明度之间常常需要权衡。在此,我们报道了具有最佳电子和光子特性的氧化铟锡纳米线层的生长,并展示了它们在可见光到近红外区域用作发光器件的完全透明顶部接触的用途。

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