具有BiTe/(Pt, Au)多层结构和SbTe支腿的超薄微机电系统热电发电机
Ultrathin MEMS thermoelectric generator with BiTe/(Pt, Au) multilayers and SbTe legs.
作者信息
Liu Yang, Mu Erzhen, Wu Zhenhua, Che Zhanxun, Sun Fangyuan, Fu Xuecheng, Wang Fengdan, Wang Xinwei, Hu Zhiyu
机构信息
National Key Laboratory of Science and Technology on Micro-Nano Fabrication, Shanghai Jiao Tong University, Shanghai, 200240, China.
Institute of Nano-Micro Energy, Shanghai Jiao Tong University, Shanghai, 200240, China.
出版信息
Nano Converg. 2020 Mar 3;7(1):8. doi: 10.1186/s40580-020-0218-x.
Multilayer structure is one of the research focuses of thermoelectric (TE) material in recent years. In this work, n-type 800 nm BiTe/(Pt, Au) multilayers are designed with p-type SbTe legs to fabricate ultrathin microelectromechanical systems (MEMS) TE devices. The power factor of the annealed BiTe/Pt multilayer reaches 46.5 μW cm K at 303 K, which corresponds to more than a 350% enhancement when compared to pristine BiTe. The annealed BiTe/Au multilayers have a lower power factor than pristine BiTe. The power of the device with SbTe and BiTe/Pt multilayers measures 20.9 nW at 463 K and the calculated maximum output power reaches 10.5 nW, which is 39.5% higher than the device based on SbTe and BiTe, and 96.7% higher than the SbTe and BiTe/Au multilayers one. This work can provide an opportunity to improve TE properties by using multilayer structures and novel ultrathin MEMS TE devices in a wide variety of applications.
多层结构是近年来热电（TE）材料的研究热点之一。在这项工作中，设计了具有p型SbTe支腿的n型800nm BiTe/(Pt, Au)多层结构，以制造超薄微机电系统（MEMS）TE器件。退火后的BiTe/Pt多层结构在303K时的功率因数达到46.5μW cm K，与原始BiTe相比提高了350%以上。退火后的BiTe/Au多层结构的功率因数低于原始BiTe。具有SbTe和BiTe/Pt多层结构的器件在463K时的功率为20.9nW，计算得出的最大输出功率达到10.5nW，比基于SbTe和BiTe的器件高39.5%，比SbTe和BiTe/Au多层结构的器件高96.7%。这项工作可为通过使用多层结构和新型超薄MEMS TE器件在各种应用中改善TE性能提供机会。
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