Makita Tatsuyuki, Yamamura Akifumi, Tsurumi Junto, Kumagai Shohei, Kurosawa Tadanori, Okamoto Toshihiro, Sasaki Mari, Watanabe Shun, Takeya Jun
Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan.
AIST-UTokyo Advanced Operando-Measurement Technology Open Innovation Laboratory (OPERANDO-OIL), National Institute of Advanced Industrial Science and Technology (AIST), 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan.
Sci Rep. 2020 Mar 13;10(1):4702. doi: 10.1038/s41598-020-61536-8.
Solution-processed organic thin film transistors (OTFTs) are an essential building block for next-generation printed electronic devices. Organic semiconductors (OSCs) that can spontaneously form a molecular assembly play a vital role in the fabrication of OTFTs. OTFT fabrication processes consist of sequential deposition of functional layers, which inherently brings significant difficulties in realizing ideal properties because underlayers are likely to be damaged by application of subsequent layers. These difficulties are particularly prominent when forming metal contact electrodes directly on an OSC surface, due to thermal damage during vacuum evaporation and the effect of solvents during subsequent photolithography. In this work, we demonstrate a simple and facile technique to transfer contact electrodes to ultrathin OSC films and form an ideal metal/OSC interface. Photolithographically defined metal electrodes are transferred and laminated using a polymeric bilayer thin film. One layer is a thick sacrificial polymer film that makes the overall film easier to handle and is water-soluble for dissolution later. The other is a thin buffer film that helps the template adhere to a substrate electrostatically. The present technique does not induce any fatal damage in the substrate OSC layers, which leads to successful fabrication of OTFTs composed of monolayer OSC films with a mobility of higher than 10 cm V s, a subthreshold swing of less than 100 mV decade, and a low contact resistance of 175 Ω⋅cm. The reproducibility of efficient contact fabrication was confirmed by the operation of a 10 × 10 array of monolayer OTFTs. The technique developed here constitutes a key step forward not only for practical OTFT fabrication but also potentially for all existing vertically stacked organic devices, such as light-emitting diodes and solar cells.
溶液处理的有机薄膜晶体管(OTFT)是下一代印刷电子器件的重要组成部分。能够自发形成分子组装的有机半导体(OSC)在OTFT的制造中起着至关重要的作用。OTFT制造工艺包括功能层的顺序沉积,由于后续层的施加可能会损坏下层,这在实现理想性能方面带来了重大困难。当直接在OSC表面形成金属接触电极时,这些困难尤为突出,这是由于真空蒸发过程中的热损伤以及后续光刻过程中溶剂的影响。在这项工作中,我们展示了一种简单便捷的技术,可将接触电极转移到超薄OSC薄膜上,并形成理想的金属/OSC界面。使用聚合物双层薄膜转移并层压光刻定义的金属电极。一层是厚的牺牲聚合物薄膜,它使整个薄膜更易于处理,并且可溶于水以便稍后溶解。另一层是薄的缓冲薄膜,它有助于模板静电附着在基板上。本技术不会在基板OSC层中引起任何致命损伤,这导致成功制造出由单层OSC薄膜组成的OTFT,其迁移率高于10 cm² V⁻¹ s⁻¹,亚阈值摆幅小于100 mV decade⁻¹,接触电阻低至175 Ω·cm。通过10×10阵列的单层OTFT的操作证实了高效接触制造的可重复性。这里开发的技术不仅是实用OTFT制造的关键一步,而且对于所有现有的垂直堆叠有机器件,如发光二极管和太阳能电池,也可能是关键一步。