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一种用于降低有机薄膜晶体管(OTFT)电极聚合物模板热膨胀系数的新型干混法。

A novel dry-blending method to reduce the coefficient of thermal expansion of polymer templates for OTFT electrodes.

作者信息

Ye Xiangdong, Tian Bo, Guo Yuxuan, Fan Fan, Cai Anjiang

机构信息

School of Mechanical and Electrical Engineering, Xi'an University of Architecture and Technology, Xi'an 710055, China.

Shaanxi Key Laboratory of Nano Materials and Technology, Xi'an 710055, China.

出版信息

Beilstein J Nanotechnol. 2020 Apr 20;11:671-677. doi: 10.3762/bjnano.11.53. eCollection 2020.

DOI:10.3762/bjnano.11.53
PMID:32395396
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7188987/
Abstract

Among the patterning technologies for organic thin-film transistors (OTFTs), the fabrication of OTFT electrodes using polymer templates has attracted much attention. However, deviations in the electrode alignment occur because the coefficient of thermal expansion (CTE) of the polymer template is much higher than the CTE of the dielectric layer. Here, a novel dry-blending method is described in which SiO nanoparticles are filled into a grooved silicon template, followed by permeation of polydimethylsiloxane (PDMS) into the SiO nanoparticle gaps. The SiO nanoparticles in the groove are extracted by curing and peeling off PDMS to prepare a PDMS/SiO composite template with a nanoparticle content of 83.8 wt %. The composite template has a CTE of 96 ppm/°C, which is a reduction by 69.23% compared with the original PDMS template. Finally, we achieved the alignment of OTFT electrodes using the composite template.

摘要

在有机薄膜晶体管(OTFT)的图案化技术中,使用聚合物模板制造OTFT电极备受关注。然而,由于聚合物模板的热膨胀系数(CTE)远高于介电层的CTE,电极对准会出现偏差。在此,描述了一种新颖的干混方法,即将SiO纳米颗粒填充到带凹槽的硅模板中,然后使聚二甲基硅氧烷(PDMS)渗透到SiO纳米颗粒间隙中。通过固化和剥离PDMS来提取凹槽中的SiO纳米颗粒,以制备纳米颗粒含量为83.8 wt%的PDMS/SiO复合模板。该复合模板的CTE为96 ppm/°C,与原始PDMS模板相比降低了69.23%。最后,我们使用该复合模板实现了OTFT电极的对准。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fd54/7188987/c8c712242f1d/Beilstein_J_Nanotechnol-11-671-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fd54/7188987/2078cdaf4e11/Beilstein_J_Nanotechnol-11-671-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fd54/7188987/7cbf29da9862/Beilstein_J_Nanotechnol-11-671-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fd54/7188987/0efc6e0c4735/Beilstein_J_Nanotechnol-11-671-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fd54/7188987/5158aaae494a/Beilstein_J_Nanotechnol-11-671-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fd54/7188987/1dbd36133d82/Beilstein_J_Nanotechnol-11-671-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fd54/7188987/c8c712242f1d/Beilstein_J_Nanotechnol-11-671-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fd54/7188987/2078cdaf4e11/Beilstein_J_Nanotechnol-11-671-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fd54/7188987/7cbf29da9862/Beilstein_J_Nanotechnol-11-671-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fd54/7188987/0efc6e0c4735/Beilstein_J_Nanotechnol-11-671-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fd54/7188987/5158aaae494a/Beilstein_J_Nanotechnol-11-671-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fd54/7188987/1dbd36133d82/Beilstein_J_Nanotechnol-11-671-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fd54/7188987/c8c712242f1d/Beilstein_J_Nanotechnol-11-671-g007.jpg

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