Tian Hao, Liu Junqiu, Dong Bin, Skehan J Connor, Zervas Michael, Kippenberg Tobias J, Bhave Sunil A
OxideMEMS Lab, Purdue University, 47907, West Lafayette, IN, USA.
Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), 1015, Lausanne, Switzerland.
Nat Commun. 2020 Jun 17;11(1):3073. doi: 10.1038/s41467-020-16812-6.
Integrated photonic devices based on SiN waveguides allow for the exploitation of nonlinear frequency conversion, exhibit low propagation loss, and have led to advances in compact atomic clocks, ultrafast ranging, and spectroscopy. Yet, the lack of Pockels effect presents a major challenge to achieve high-speed modulation of SiN. Here, microwave-frequency acousto-optic modulation is realized by exciting high-overtone bulk acoustic wave resonances (HBAR) in the photonic stack. Although HBAR is ubiquitously used in modern communication and superconducting circuits, this is the first time it has been incorporated on a photonic integrated chip. The tight vertical acoustic confinement releases the lateral design of freedom, and enables negligible cross-talk and preserving low optical loss. This hybrid HBAR nanophotonic platform can find immediate applications in topological photonics with synthetic dimensions, compact opto-electronic oscillators, and microwave-to-optical converters. As an application, a SiN-based optical isolator is demonstrated by spatiotemporal modulation, with over 17 dB isolation achieved.
基于氮化硅波导的集成光子器件可用于非线性频率转换,具有低传播损耗,并推动了紧凑型原子钟、超快测距和光谱学的发展。然而,缺乏普克尔效应给实现氮化硅的高速调制带来了重大挑战。在此,通过激发光子堆栈中的高阶体声波共振(HBAR)实现了微波频率的声光调制。尽管HBAR在现代通信和超导电路中广泛应用,但这是它首次被集成到光子集成芯片上。紧密的垂直声学限制释放了横向设计自由度,并实现了可忽略不计的串扰和低光损耗。这种混合HBAR纳米光子平台可立即应用于具有合成维度的拓扑光子学、紧凑型光电振荡器和微波到光转换器。作为一个应用实例,通过时空调制展示了一种基于氮化硅的光隔离器,实现了超过17 dB的隔离度。