Grinblat Gustavo, Zhang Haizhong, Nielsen Michael P, Krivitsky Leonid, Berté Rodrigo, Li Yi, Tilmann Benjamin, Cortés Emiliano, Oulton Rupert F, Kuznetsov Arseniy I, Maier Stefan A
Departamento de Física, FCEN, IFIBA-CONICET, Universidad de Buenos Aires, C1428EGA Buenos Aires, Argentina.
Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 138634, Singapore.
Sci Adv. 2020 Aug 21;6(34). doi: 10.1126/sciadv.abb3123. Print 2020 Aug.
High-refractive index nanostructured dielectrics have the ability to locally enhance electromagnetic fields with low losses while presenting high third-order nonlinearities. In this work, we exploit these characteristics to achieve efficient ultrafast all-optical modulation in a crystalline gallium phosphide (GaP) nanoantenna through the optical Kerr effect (OKE) and two-photon absorption (TPA) in the visible/near-infrared range. We show that an individual GaP nanodisk can yield differential reflectivity modulations of up to ~40%, with characteristic modulation times between 14 and 66 fs, when probed at the anapole excitation (AE). Numerical simulations reveal that the AE represents a unique condition where both the OKE and TPA contribute with the same modulation sign, maximizing the response. These findings highly outperform previous reports on sub-100-fs all-optical switching from resonant nanoscale dielectrics, which have demonstrated modulation depths no larger than 0.5%, placing GaP nanoantennas as a promising choice for ultrafast all-optical modulation at the nanometer scale.
高折射率纳米结构电介质能够在低损耗的情况下局部增强电磁场,同时呈现出高的三阶非线性。在这项工作中,我们利用这些特性,通过光学克尔效应(OKE)和可见/近红外范围内的双光子吸收(TPA),在磷化镓(GaP)晶体纳米天线中实现高效的超快全光调制。我们表明,当在零极点激发(AE)下探测时,单个GaP纳米盘可产生高达约40%的差分反射率调制,特征调制时间在14至66飞秒之间。数值模拟表明,AE代表了一种独特的条件,即OKE和TPA以相同的调制符号起作用,从而使响应最大化。这些发现大大优于先前关于共振纳米级电介质的亚100飞秒全光开关的报道,后者所展示的调制深度不超过0.5%,这使得GaP纳米天线成为纳米尺度超快全光调制的一个有前景的选择。