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在反极子激发下,非线性晶体磷化镓纳米盘中实现高效超快全光调制。

Efficient ultrafast all-optical modulation in a nonlinear crystalline gallium phosphide nanodisk at the anapole excitation.

作者信息

Grinblat Gustavo, Zhang Haizhong, Nielsen Michael P, Krivitsky Leonid, Berté Rodrigo, Li Yi, Tilmann Benjamin, Cortés Emiliano, Oulton Rupert F, Kuznetsov Arseniy I, Maier Stefan A

机构信息

Departamento de Física, FCEN, IFIBA-CONICET, Universidad de Buenos Aires, C1428EGA Buenos Aires, Argentina.

Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 138634, Singapore.

出版信息

Sci Adv. 2020 Aug 21;6(34). doi: 10.1126/sciadv.abb3123. Print 2020 Aug.

Abstract

High-refractive index nanostructured dielectrics have the ability to locally enhance electromagnetic fields with low losses while presenting high third-order nonlinearities. In this work, we exploit these characteristics to achieve efficient ultrafast all-optical modulation in a crystalline gallium phosphide (GaP) nanoantenna through the optical Kerr effect (OKE) and two-photon absorption (TPA) in the visible/near-infrared range. We show that an individual GaP nanodisk can yield differential reflectivity modulations of up to ~40%, with characteristic modulation times between 14 and 66 fs, when probed at the anapole excitation (AE). Numerical simulations reveal that the AE represents a unique condition where both the OKE and TPA contribute with the same modulation sign, maximizing the response. These findings highly outperform previous reports on sub-100-fs all-optical switching from resonant nanoscale dielectrics, which have demonstrated modulation depths no larger than 0.5%, placing GaP nanoantennas as a promising choice for ultrafast all-optical modulation at the nanometer scale.

摘要

高折射率纳米结构电介质能够在低损耗的情况下局部增强电磁场,同时呈现出高的三阶非线性。在这项工作中,我们利用这些特性,通过光学克尔效应(OKE)和可见/近红外范围内的双光子吸收(TPA),在磷化镓(GaP)晶体纳米天线中实现高效的超快全光调制。我们表明,当在零极点激发(AE)下探测时,单个GaP纳米盘可产生高达约40%的差分反射率调制,特征调制时间在14至66飞秒之间。数值模拟表明,AE代表了一种独特的条件,即OKE和TPA以相同的调制符号起作用,从而使响应最大化。这些发现大大优于先前关于共振纳米级电介质的亚100飞秒全光开关的报道,后者所展示的调制深度不超过0.5%,这使得GaP纳米天线成为纳米尺度超快全光调制的一个有前景的选择。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccb5/7442475/af08e392f396/abb3123-F1.jpg

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