Mukherjee Arunabh, Shayan Kamran, Li Lizhong, Shan Jie, Mak Kin Fai, Vamivakas A Nick
The Institute of Optics, University of Rochester, Rochester, NY, USA.
School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
Nat Commun. 2020 Oct 30;11(1):5502. doi: 10.1038/s41467-020-19262-2.
Isolated spins are the focus of intense scientific exploration due to their potential role as qubits for quantum information science. Optical access to single spins, demonstrated in III-V semiconducting quantum dots, has fueled research aimed at realizing quantum networks. More recently, quantum emitters in atomically thin materials such as tungsten diselenide have been demonstrated to host optically addressable single spins by means of electrostatic doping the localized excitons. Electrostatic doping is not the only route to charging localized quantum emitters and another path forward is through band structure engineering using van der Waals heterojunctions. Critical to this second approach is to interface tungsten diselenide with other van der Waals materials with relative band-alignments conducive to the phenomenon of charge transfer. In this work we show that the Type-II band-alignment between tungsten diselenide and chromium triiodide can be exploited to excite localized charged excitons in tungsten diselenide. Leveraging spin-dependent charge transfer in the device, we demonstrate spin selectivity in the preparation of the spin-valley state of localized single holes. Combined with the use of strain-inducing nanopillars to coordinate the spatial location of tungsten diselenide quantum emitters, we uncover the possibility of realizing large-scale deterministic arrays of optically addressable spin-valley holes in a solid state platform.
由于孤立自旋作为量子信息科学中量子比特的潜在作用,它们成为了激烈科学探索的焦点。在III-V族半导体量子点中实现的对单个自旋的光学访问,推动了旨在实现量子网络的研究。最近,已证明诸如二硒化钨等原子级薄材料中的量子发射器可通过对局域激子进行静电掺杂来容纳光学可寻址的单个自旋。静电掺杂并非对局域量子发射器充电的唯一途径,另一条前进的道路是通过使用范德华异质结进行能带结构工程。这种第二种方法的关键在于使二硒化钨与其他具有有利于电荷转移现象的相对能带排列的范德华材料形成界面。在这项工作中,我们表明可以利用二硒化钨与三碘化铬之间的II型能带排列来激发二硒化钨中的局域带电激子。利用器件中自旋相关的电荷转移,我们在制备局域单空穴的自旋-谷态时展示了自旋选择性。结合使用应变诱导纳米柱来协调二硒化钨量子发射器的空间位置,我们发现了在固态平台上实现大规模确定性光学可寻址自旋-谷空穴阵列的可能性。