Chang Chi-Yuan, Huang Hsin-Hsiang, Tsai Hsinhan, Lin Shu-Ling, Liu Pang-Hsiao, Chen Wei, Hsu Fang-Chi, Nie Wanyi, Chen Yang-Fang, Wang Leeyih
Center for Condensed Matter Sciences National Taiwan University No. 1, Sec. 4, Roosevelt Rd. Taipei 10617 Taiwan.
Department of Physics National Taiwan University No. 1, Sec. 4, Roosevelt Rd. Taipei 10617 Taiwan.
Adv Sci (Weinh). 2021 Jan 6;8(5):2002718. doi: 10.1002/advs.202002718. eCollection 2021 Mar.
Crystallinity and crystal orientation have a predominant impact on a materials' semiconducting properties, thus it is essential to manipulate the microstructure arrangements for desired semiconducting device performance. Here, ultra-uniform hole-transporting material (HTM) by self-assembling COOH-functionalized P3HT (P3HT-COOH) is fabricated, on which near single crystal quality perovskite thin film can be grown. In particular, the self-assembly approach facilitates the P3HT-COOH molecules to form an ordered and homogeneous monolayer on top of the indium tin oxide (ITO) electrode facilitate the perovskite crystalline film growth with high quality and preferred orientations. After detailed spectroscopy and device characterizations, it is found that the carboxylic acid anchoring groups can down-shift the work function and passivate the ITO surface, retarding the interface carrier recombination. As a result, the device made with the self-assembled HTM show high open-circuit voltage over 1.10 V and extend the lifetime over 4,300 h when storing at 30% relative humidity. Moreover, the cell works efficiently under much reduced light power, making it useful as power source under dim-light conditions. The demonstration suggests a new facile way of fabricating monolayer HTM for high efficiency perovskite devices, as well as the interconnecting layer needed for tandem cell.
结晶度和晶体取向对材料的半导体性能具有主要影响,因此为了实现所需的半导体器件性能,控制微观结构排列至关重要。在此,通过自组装COOH官能化的P3HT(P3HT-COOH)制备了超均匀的空穴传输材料(HTM),在其上可以生长接近单晶质量的钙钛矿薄膜。特别地,自组装方法有助于P3HT-COOH分子在氧化铟锡(ITO)电极顶部形成有序且均匀的单层,促进高质量和择优取向的钙钛矿晶体膜生长。经过详细的光谱学和器件表征后发现,羧酸锚定基团可以降低功函数并钝化ITO表面,抑制界面载流子复合。结果,用自组装HTM制成的器件在相对湿度为30%的条件下储存时,显示出超过1.10 V的高开路电压,并将寿命延长至超过4300小时。此外,该电池在大幅降低的光功率下仍能高效工作,使其适用于弱光条件下的电源。该示范展示了一种制备用于高效钙钛矿器件的单层HTM以及串联电池所需互连层的新简便方法。