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利用忆阻器产生的熵和商用现货组件演示三种真随机数发生器电路

Demonstration of Three True Random Number Generator Circuits Using Memristor Created Entropy and Commercial Off-the-Shelf Components.

作者信息

Stoller Scott, Campbell Kristy A

机构信息

Department of Electrical and Computer Engineering, Boise State University, Boise, ID 83725, USA.

出版信息

Entropy (Basel). 2021 Mar 20;23(3):371. doi: 10.3390/e23030371.

DOI:10.3390/e23030371
PMID:33804665
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8003698/
Abstract

In this work, we build and test three memristor-based true random number generator (TRNG) circuits: two previously presented in the literature and one which is our own design. The functionality of each circuit is assessed using the National Institute of Standards and Technology (NIST) Statistical Test Suite (STS). The TRNG circuits were built using commercially available off-the-shelf parts, including the memristor. The results of this work confirm the usefulness of memristors for successful implementation of TRNG circuits, as well as the ease with which a TRNG can be built using simple circuit designs and off-the-shelf breadboard circuit components.

摘要

在这项工作中,我们构建并测试了三种基于忆阻器的真随机数发生器(TRNG)电路:两种是先前文献中提出的,一种是我们自己的设计。使用美国国家标准与技术研究院(NIST)统计测试套件(STS)评估每个电路的功能。TRNG电路是使用包括忆阻器在内的市售现货部件构建的。这项工作的结果证实了忆阻器对于成功实现TRNG电路的有用性,以及使用简单电路设计和现货面包板电路组件构建TRNG的简易性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba33/8003698/80052333bbf6/entropy-23-00371-g008a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba33/8003698/8d92ebad7d3b/entropy-23-00371-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba33/8003698/722e76cb2afa/entropy-23-00371-g002a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba33/8003698/c4a1f7db60d4/entropy-23-00371-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba33/8003698/41ba0aabbd5d/entropy-23-00371-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba33/8003698/bead947036a2/entropy-23-00371-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba33/8003698/1ddeb6d97bbc/entropy-23-00371-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba33/8003698/54e02c87bffe/entropy-23-00371-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba33/8003698/80052333bbf6/entropy-23-00371-g008a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba33/8003698/8d92ebad7d3b/entropy-23-00371-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba33/8003698/722e76cb2afa/entropy-23-00371-g002a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba33/8003698/c4a1f7db60d4/entropy-23-00371-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba33/8003698/41ba0aabbd5d/entropy-23-00371-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba33/8003698/bead947036a2/entropy-23-00371-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba33/8003698/1ddeb6d97bbc/entropy-23-00371-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba33/8003698/54e02c87bffe/entropy-23-00371-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba33/8003698/80052333bbf6/entropy-23-00371-g008a.jpg

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本文引用的文献

1
A novel true random number generator based on a stochastic diffusive memristor.一种基于随机扩散忆阻器的新型真随机数发生器。
Nat Commun. 2017 Oct 12;8(1):882. doi: 10.1038/s41467-017-00869-x.
2
Electrochemical dynamics of nanoscale metallic inclusions in dielectrics.纳米尺度金属夹杂物在电介质中的电化学动力学。
Nat Commun. 2014 Jun 23;5:4232. doi: 10.1038/ncomms5232.
3
The missing memristor found.缺失的忆阻器被找到。
Nature. 2008 May 1;453(7191):80-3. doi: 10.1038/nature06932.