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巨激子增强的位移电流以及由多电子相互作用产生的亚带隙光激发下的直流传导。

Giant exciton-enhanced shift currents and direct current conduction with subbandgap photo excitations produced by many-electron interactions.

作者信息

Chan Yang-Hao, Qiu Diana Y, da Jornada Felipe H, Louie Steven G

机构信息

Department of Physics, University of California, Berkeley, CA 94720-7300.

Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720.

出版信息

Proc Natl Acad Sci U S A. 2021 Jun 22;118(25). doi: 10.1073/pnas.1906938118.

Abstract

Shift current is a direct current generated from nonlinear light-matter interaction in a noncentrosymmetric crystal and is considered a promising candidate for next-generation photovoltaic devices. The mechanism for shift currents in real materials is, however, still not well understood, especially if electron-hole interactions are included. Here, we employ a first-principles interacting Green's-function approach on the Keldysh contour with real-time propagation to study photocurrents generated by nonlinear optical processes under continuous wave illumination in real materials. We demonstrate a strong direct current shift current at subbandgap excitation frequencies in monolayer GeS due to strongly bound excitons, as well as a giant excitonic enhancement in the shift current coefficients at above bandgap photon frequencies. Our results suggest that atomically thin two-dimensional materials may be promising building blocks for next-generation shift current devices.

摘要

转移电流是由非中心对称晶体中的非线性光-物质相互作用产生的直流电流,被认为是下一代光伏器件的一个有前途的候选者。然而,实际材料中转移电流的机制仍未得到很好的理解,特别是当考虑电子-空穴相互作用时。在这里,我们采用基于含时传播的Keldysh轮廓的第一性原理相互作用格林函数方法,来研究实际材料在连续波照明下由非线性光学过程产生的光电流。我们证明,由于强束缚激子的存在,单层GeS在亚带隙激发频率下有很强的直流转移电流,并且在带隙以上光子频率下转移电流系数有巨大的激子增强。我们的结果表明,原子级薄的二维材料可能是下一代转移电流器件的有前途的构建块。

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