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六方氮化硼纳米片中产生的表面颜色缺陷光学性质的外在影响。

Extrinsic Effects on the Optical Properties of Surface Color Defects Generated in Hexagonal Boron Nitride Nanosheets.

作者信息

Krečmarová Marie, Canet-Albiach Rodolfo, Pashaei-Adl Hamid, Gorji Setatira, Muñoz-Matutano Guillermo, Nesládek Miloš, Martínez-Pastor Juan P, Sánchez-Royo Juan F

机构信息

Instituto de Ciencia de Materiales, Universidad de Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain.

Institute for Materials Research, Material Physics Division University of Hasselt, Wetenschapspark 1, B 3590 Diepenbeek, Belgium.

出版信息

ACS Appl Mater Interfaces. 2021 Sep 29;13(38):46105-46116. doi: 10.1021/acsami.1c11060. Epub 2021 Sep 14.

Abstract

Hexagonal boron nitride (hBN) is a wide-band gap van der Waals material able to host light-emitting centers behaving as single photon sources. Here, we report the generation of color defects in hBN nanosheets dispersed on different kinds of substrates by thermal treatment processes. The optical properties of these defects have been studied using microspectroscopy techniques and far-field simulations of their light emission. Using these techniques, we have found that subsequent ozone treatments of the deposited hBN nanosheets improve the optical emission properties of created defects, as revealed by their zero-phonon linewidth narrowing and reduction of background emission. Microlocalized color defects deposited on dielectric substrates show bright (≈1 MHz) and stable room-temperature light emission with zero-phonon line peak energy varying from 1.56 to 2.27 eV, being the most probable value 2.16 eV. In addition to this, we have observed a substrate dependence of the optical performance of the generated color defects. The energy range of the emitters prepared on gold substrates is strongly reduced, as compared to that observed in dielectric substrates or even alumina. We attribute this effect to the quenching of low-energy color defects (these of energies lower than 1.9 eV) when gold substrates are used, which reveals the surface nature of the defects created in hBN nanosheets. Results described here are important for future quantum light experiments and their integration in photonic chips.

摘要

六方氮化硼(hBN)是一种宽带隙范德华材料,能够承载表现为单光子源的发光中心。在此,我们报告了通过热处理工艺在分散于不同种类衬底上的hBN纳米片中产生颜色缺陷的情况。利用显微光谱技术及其发光的远场模拟研究了这些缺陷的光学性质。通过这些技术,我们发现对沉积的hBN纳米片进行后续臭氧处理可改善所产生缺陷的光发射性质,这表现为它们的零声子线宽变窄和背景发射减少。沉积在介电衬底上的微定位颜色缺陷在室温下呈现明亮(≈1 MHz)且稳定的光发射,零声子线峰值能量在1.56至2.27 eV之间变化,最可能的值为2.16 eV。除此之外,我们还观察到所产生颜色缺陷的光学性能存在衬底依赖性。与在介电衬底甚至氧化铝中观察到的情况相比,在金衬底上制备的发射体的能量范围大幅减小。我们将这种效应归因于使用金衬底时低能量颜色缺陷(能量低于1.9 eV的缺陷)的猝灭,这揭示了hBN纳米片中所产生缺陷的表面性质。此处描述的结果对于未来的量子光实验及其在光子芯片中的集成具有重要意义。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c407/8485329/4c2a8e0c8aa2/am1c11060_0002.jpg

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