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具有-BN隧道势垒的约瑟夫森结:低临界电流噪声的观测

A Josephson junction with-BN tunnel barrier: observation of low critical current noise.

作者信息

Tian Jifa, Jauregui Luis A, Wilen C D, Rigosi Albert F, Newell David B, McDermott R, Chen Yong P

机构信息

Department of Physics and Astronomy and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, United States of America.

Department of Physics and Astronomy, University of Wyoming, Laramie, WY 82071, United States of America.

出版信息

J Phys Condens Matter. 2021 Oct 1;33(49). doi: 10.1088/1361-648X/ac268f.

Abstract

Decoherence in quantum bits (qubits) is a major challenge for realizing scalable quantum computing. One of the primary causes of decoherence in qubits and quantum circuits based on superconducting Josephson junctions is the critical current fluctuation. Many efforts have been devoted to suppressing the critical current fluctuation in Josephson junctions. Nonetheless, the efforts have been hindered by the defect-induced trapping states in oxide-based tunnel barriers and the interfaces with superconductors in the traditional Josephson junctions. Motivated by this, along with the recent demonstration of 2D insulator-BN with exceptional crystallinity and low defect density, we fabricated a vertical NbSe/-BN/Nb Josephson junction consisting of a bottom NbSesuperconductor thin layer and a top Nb superconductor spaced by an atomically thin-BN layer. We further characterized the superconducting current and voltage (-) relationships and Fraunhofer pattern of the NbSe/-BN/Nb junction. Notably, we demonstrated the critical current noise (1/noise power) in the-BN-based Josephson device is at least a factor of four lower than that of the previously studied aluminum oxide-based Josephson junctions. Our work offers a strong promise of-BN as a novel tunnel barrier for high-quality Josephson junctions and qubit applications.

摘要

量子比特(qubits)中的退相干是实现可扩展量子计算的一项重大挑战。基于超导约瑟夫森结的量子比特和量子电路中退相干的主要原因之一是临界电流波动。人们已投入诸多努力来抑制约瑟夫森结中的临界电流波动。然而,这些努力受到传统约瑟夫森结中基于氧化物的隧道势垒以及与超导体界面处缺陷诱导的俘获态的阻碍。受此启发,连同近期对具有卓越结晶度和低缺陷密度的二维绝缘体 - BN的展示,我们制造了一种垂直的NbSe₂/-BN/Nb约瑟夫森结,它由底部的NbSe₂超导薄层和顶部的Nb超导体组成,中间由原子级薄的BN层隔开。我们进一步表征了NbSe₂/-BN/Nb结的超导电流与电压(I-V)关系以及夫琅禾费图案。值得注意的是,我们证明了基于BN的约瑟夫森器件中的临界电流噪声(1/I噪声功率)至少比先前研究的基于氧化铝的约瑟夫森结低四倍。我们的工作为BN作为用于高质量约瑟夫森结和量子比特应用的新型隧道势垒提供了有力的前景。

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