基于氮化镓的直接寻址纳米发光二极管阵列：制备与电光特性

Directly addressable GaN-based nano-LED arrays: fabrication and electro-optical characterization.

作者信息

Bezshlyakh Daria D, Spende Hendrik, Weimann Thomas, Hinze Peter, Bornemann Steffen, Gülink Jan, Canals Joan, Prades Joan Daniel, Dieguez Angel, Waag Andreas

机构信息

Institute of Semiconductor Technology, Technische Universität Braunschweig, Hans-Sommer Str. 66, 38106 Braunschweig, Germany.

Laboratory for Emerging Nanometrology, Langer Kamp 6 a/b, 38106 Braunschweig, Germany.

出版信息

Microsyst Nanoeng. 2020 Oct 19;6:88. doi: 10.1038/s41378-020-00198-y. eCollection 2020.

DOI:10.1038/s41378-020-00198-y

PMID:34567698

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8433403/

Abstract

The rapid development of display technologies has raised interest in arrays of self-emitting, individually controlled light sources atthe microscale. Gallium nitride (GaN) micro-light-emitting diode (LED) technology meets this demand. However, the current technology is not suitable for the fabrication of arrays of submicron light sources that can be controlled individually. Our approach is based on nanoLED arrays that can directly address each array element and a self-pitch with dimensions below the wavelength of light. The design and fabrication processes are explained in detail and possess two geometries: a 6 × 6 array with 400 nm LEDs and a 2 × 32 line array with 200 nm LEDs. These nanoLEDs are developed as core elements of a novel on-chip super-resolution microscope. GaN technology, based on its physical properties, is an ideal platform for such nanoLEDs.

摘要

显示技术的快速发展引发了人们对微尺度下自发光、可单独控制的光源阵列的兴趣。氮化镓（GaN）微发光二极管（LED）技术满足了这一需求。然而，当前技术并不适用于制造可单独控制的亚微米光源阵列。我们的方法基于能够直接寻址每个阵列元件且具有低于光波长尺寸的自间距的纳米LED阵列。详细解释了设计和制造过程，其具有两种几何结构：一种是带有400纳米LED的6×6阵列，另一种是带有200纳米LED的2×32线阵列。这些纳米LED被开发为一种新型片上超分辨率显微镜的核心元件。基于其物理特性，GaN技术是此类纳米LED的理想平台。