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脉冲激光沉积CsAgBiBr:从机械化学合成粉末到干式单步沉积

Pulsed Laser Deposition of CsAgBiBr: from Mechanochemically Synthesized Powders to Dry, Single-Step Deposition.

作者信息

Rodkey Nathan, Kaal Stan, Sebastia-Luna Paz, Birkhölzer Yorick A, Ledinsky Martin, Palazon Francisco, Bolink Henk J, Morales-Masis Monica

机构信息

MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, Enschede 7500 AE, The Netherlands.

Insituto de Ciencia Molecular, Universidad de Valencia, Catedrático J. Beltrán 2, 46980 Paterna, Spain.

出版信息

Chem Mater. 2021 Sep 28;33(18):7417-7422. doi: 10.1021/acs.chemmater.1c02054. Epub 2021 Sep 6.

DOI:10.1021/acs.chemmater.1c02054
PMID:34602745
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8482541/
Abstract

CsAgBiBr has been proposed as a promising lead-free and stable double perovskite alternative to hybrid and lead-based perovskites. However, the low solubility of precursors during wet synthesis, or the distinct volatility of components during evaporation, results in complex multistep synthesis approaches, hampering the widespread employment of CsAgBiBr films. Here, we present pulsed laser deposition of CsAgBiBr films as a dry, single-step and single-source deposition approach for high-quality film formation. CsAgBiBr powders were prepared by mechanochemical synthesis and pressed into a solid target maintaining phase purity. Controlled laser ablation of the double perovskite target in vacuum and a substrate temperature of 200 °C results in the formation of highly crystalline CsAgBiBr films. We discuss the importance of deposition pressure to achieve stoichiometric transfer and of substrate temperature during PLD growth to obtain high-quality CsAgBiBr films with grain sizes > 200 nm. This work demonstrates the potential of PLD, an established technique in the semiconductor industry, to deposit complex halide perovskite materials while being compatible with optoelectronic device fabrication, such as UV and X-ray detectors.

摘要

CsAgBiBr已被提议作为一种有前景的无铅且稳定的双钙钛矿,可替代混合钙钛矿和铅基钙钛矿。然而,湿合成过程中前驱体的低溶解度,或蒸发过程中各组分明显的挥发性,导致了复杂的多步合成方法,阻碍了CsAgBiBr薄膜的广泛应用。在此,我们展示了脉冲激光沉积CsAgBiBr薄膜,这是一种用于高质量成膜的干式单步单源沉积方法。通过机械化学合成制备CsAgBiBr粉末,并压制成保持相纯度的固体靶材。在真空中对双钙钛矿靶材进行可控激光烧蚀,并将衬底温度保持在200°C,可形成高度结晶的CsAgBiBr薄膜。我们讨论了沉积压力对实现化学计量转移的重要性,以及脉冲激光沉积生长过程中衬底温度对获得晶粒尺寸>200 nm的高质量CsAgBiBr薄膜的重要性。这项工作展示了脉冲激光沉积(半导体行业中一种成熟的技术)在沉积复杂卤化物钙钛矿材料方面的潜力,同时与诸如紫外和X射线探测器等光电器件制造兼容。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/614e/8482541/cb19c43d0d70/cm1c02054_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/614e/8482541/19c39b3f1735/cm1c02054_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/614e/8482541/6a466a37ba63/cm1c02054_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/614e/8482541/a40757c9a687/cm1c02054_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/614e/8482541/56c8d378b81e/cm1c02054_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/614e/8482541/cb19c43d0d70/cm1c02054_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/614e/8482541/19c39b3f1735/cm1c02054_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/614e/8482541/6a466a37ba63/cm1c02054_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/614e/8482541/a40757c9a687/cm1c02054_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/614e/8482541/56c8d378b81e/cm1c02054_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/614e/8482541/cb19c43d0d70/cm1c02054_0006.jpg

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