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445nm 半导体激光对五种牙种植系统的热效应:一项体外研究。

Thermal effect of a 445 nm diode laser on five dental implant systems: an in vitro study.

机构信息

Department of Oral and Maxillofacial Surgery, School of Medicine, Technical University of Munich, Ismaninger Straße 22, 81675, Munich, Germany.

Department of Mechanical Engineering and Munich School of BioEngineering, Chair of Medical Materials and Implants, Technical University of Munich, Boltzmannstraße 15, 85748, Garching, Germany.

出版信息

Sci Rep. 2021 Oct 11;11(1):20174. doi: 10.1038/s41598-021-99709-8.

Abstract

The purpose of this in vitro study was to assess the thermal effect of the 445 nm diode laser on five dental implant systems. In an ailing implant protocol, five commercial dental implant systems were subjected to 445 nm diode laser energy at different wattages [W], exposure times, and modes (continuous wave [CW] vs. pulsed and contact vs. non-contact) of laser beam delivery. Scanning electron microscopy (SEM) allowed the evaluation of irradiated implant surfaces. A total of 2880 temperature response curves were recorded. The 445 nm wavelength caused temperature increases of more than 10 °C at or above the 0.8 W power level working in CW mode for 5 s and in pulsed mode at 3 W for 20 s with 10% duty cycle. Highest rises in temperature were seen in the Straumann Pure ceramic implant, lowest in the Ankylos system. SEM analysis revealed no surface alteration in all systems in non-contact mode. The applied laser is not inherently safe for the decontamination of ailing implants. From the results of this study it was concluded that different dental implant materials and geometries show different temperature response curves when subjected to 445 nm diode laser energy. Clinicians ought to be aware of this. Therefore, manufacturers of laser devices should provide implant-specific laser parameters for the decontamination process. However, both laser irradiation systems can prevent harmful rises in temperature and surface alteration when used at moderate laser parameters.

摘要

本体外研究的目的是评估 445nm 半导体激光对五种牙科种植体系统的热效应。在受损种植体方案中,将五种商业牙科种植体系统置于不同功率[W]、照射时间和激光束输送模式(连续波[CW]与脉冲、接触与非接触)的 445nm 半导体激光能量下。扫描电子显微镜(SEM)允许评估辐照种植体表面。共记录了 2880 条温度响应曲线。在 CW 模式下,445nm 波长在 0.8W 功率水平以上照射 5s,在脉冲模式下以 3W 功率照射 20s、占空比为 10%时,会导致超过 10°C 的温度升高。在 Straumann Pure 陶瓷种植体中观察到的温度升高最高,在 Ankylos 系统中观察到的温度升高最低。SEM 分析显示,在非接触模式下,所有系统的表面均无变化。所应用的激光本身并不安全,不能用于消毒受损的种植体。从这项研究的结果得出结论,当受到 445nm 半导体激光能量照射时,不同的牙科种植体材料和几何形状会显示出不同的温度响应曲线。临床医生应该意识到这一点。因此,激光设备制造商应为消毒过程提供特定于种植体的激光参数。然而,当使用中等激光参数时,两种激光照射系统都可以防止有害的温升和表面变化。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3c95/8505640/fe85eaad698f/41598_2021_99709_Fig1_HTML.jpg

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