Meshchaninov Fedor Pavlovich, Zhevnenko Dmitry Alexeevich, Kozhevnikov Vladislav Sergeevich, Shamin Evgeniy Sergeevich, Telminov Oleg Alexandrovich, Gornev Evgeniy Sergeevich
Moscow Institute of Physics and Technology, 9 Institutskiy per., Dolgoprudny, 141701 Moscow, Russia.
Joint-Stock Company "Molecular Electronics Research Institute" (JSC MERI), 124460 Moscow, Russia.
Micromachines (Basel). 2021 Sep 30;12(10):1201. doi: 10.3390/mi12101201.
The use of low-dimensional materials is a promising approach to improve the key characteristics of memristors. The development process includes modeling, but the question of the most common compact model applicability to the modeling of device characteristics with the inclusion of low-dimensional materials remains open. In this paper, a comparative analysis of linear and nonlinear drift as well as threshold models was conducted. For this purpose, the assumption of the relationship between the results of the optimization of the volt-ampere characteristic loop and the descriptive ability of the model was used. A global random search algorithm was used to solve the optimization problem, and an error function with the inclusion of a regularizer was developed to estimate the loop features. Based on the characteristic features derived through meta-analysis, synthetic volt-ampere characteristic contours were built and the results of their approximation by different models were compared. For every model, the quality of the threshold voltage estimation was evaluated, the forms of the memristor potential functions and dynamic attractors associated with experimental contours on graphene oxide were calculated.
使用低维材料是改善忆阻器关键特性的一种很有前景的方法。开发过程包括建模，但关于最常见的紧凑模型在包含低维材料的器件特性建模中的适用性问题仍然悬而未决。本文对线性和非线性漂移以及阈值模型进行了比较分析。为此，利用了伏安特性回路优化结果与模型描述能力之间关系的假设。使用全局随机搜索算法来解决优化问题，并开发了包含正则化器的误差函数来估计回路特征。基于通过元分析得出的特征，构建了合成伏安特性轮廓，并比较了不同模型对其的近似结果。对于每个模型，评估了阈值电压估计的质量，计算了忆阻器势函数的形式以及与氧化石墨烯上实验轮廓相关的动态吸引子。
