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用于可见光的低损耗宽带双层边缘耦合器。

Low-loss broadband bi-layer edge couplers for visible light.

作者信息

Lin Yiding, Mak Jason C C, Chen Hong, Mu Xin, Stalmashonak Andrei, Jung Youngho, Luo Xianshu, Lo Patrick G-Q, Sacher Wesley D, Poon Joyce K S

出版信息

Opt Express. 2021 Oct 11;29(21):34565-34576. doi: 10.1364/OE.435669.

Abstract

Low-loss broadband fiber-to-chip coupling is currently challenging for visible-light photonic-integrated circuits (PICs) that need both high confinement waveguides for high-density integration and a minimum feature size above foundry lithographical limit. Here, we demonstrate bi-layer silicon nitride (SiN) edge couplers that have ≤ 4 dB/facet coupling loss with the Nufern S405-XP fiber over a broad optical wavelength range from 445 to 640 nm. The design uses a thin layer of SiN to expand the mode at the facet and adiabatically transfers the input light into a high-confinement single-mode waveguide (150-nm thick) for routing, while keeping the minimum nominal lithographic feature size at 150 nm. The achieved fiber-to-chip coupling loss is about 3 to 5 dB lower than that of single-layer designs with the same waveguide confinement and minimum feature size limitation.

摘要

对于需要用于高密度集成的高限制波导以及高于代工厂光刻极限的最小特征尺寸的可见光光子集成电路(PIC)而言,低损耗宽带光纤到芯片的耦合目前具有挑战性。在此,我们展示了双层氮化硅(SiN)边缘耦合器,在445至640 nm的宽光学波长范围内,与Nufern S405-XP光纤的耦合损耗≤4 dB/面。该设计使用一层薄的SiN来扩展面处的模式,并将输入光绝热地传输到用于路由的高限制单模波导(150 nm厚)中,同时将最小标称光刻特征尺寸保持在150 nm。所实现的光纤到芯片的耦合损耗比具有相同波导限制和最小特征尺寸限制的单层设计低约3至5 dB。

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