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从平面到全栅场效应晶体管的历程:综述。

Journey of MOSFET from Planar to Gate All Around: A Review.

机构信息

School of Electronics Engineering, VIT-AP University, Amaravati-522237, AP, India.

Department of ECE, Koneru Lakshmaiah Education Foundation, Vaddeswaram-522502, AP, India.

出版信息

Recent Pat Nanotechnol. 2022 May 9;16(4):326-332. doi: 10.2174/1872210515666210719102855.

Abstract

With the continuous miniaturization in device dimension to reach the expectation raised by semiconductor users, the shape and size of the MOSFET are changing periodically. The journey started in the year 1960, reached the milestone, and still going on to create history. Due to continuous downscaling, the device dimensions have already reached the critical limit and further miniaturization is a challenge. As a result of which some unwanted effects were raised unknowingly to suppress the device performances while entering into nanoscale. To overcome these kinds of barriers, different device architectures were proposed to keep the journey on. This paper focused on those types of advanced structures in MOSFET, which kept Moore's law alive.

摘要

随着器件尺寸的不断缩小,以达到半导体用户提出的期望,MOSFET 的形状和尺寸正在周期性地发生变化。这场旅程始于 1960 年,达到了里程碑,并且仍在不断创造历史。由于不断缩小尺寸,器件尺寸已经达到了临界极限,进一步缩小尺寸是一个挑战。结果,一些意想不到的影响在进入纳米尺度时被无意中提出,以抑制器件性能。为了克服这些障碍,提出了不同的器件结构来保持前进的步伐。本文主要关注那些在 MOSFET 中保持摩尔定律的先进结构类型。

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